Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

HGTG18N120BN

HGTG18N120BN

For Reference Only

Part Number HGTG18N120BN
PNEDA Part # HGTG18N120BN
Description IGBT 1200V 54A 390W TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,104
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGTG18N120BN Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGTG18N120BN
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
HGTG18N120BN, HGTG18N120BN Datasheet (Total Pages: 8, Size: 112.8 KB)
PDFHGTG18N120BN Datasheet Cover
HGTG18N120BN Datasheet Page 2 HGTG18N120BN Datasheet Page 3 HGTG18N120BN Datasheet Page 4 HGTG18N120BN Datasheet Page 5 HGTG18N120BN Datasheet Page 6 HGTG18N120BN Datasheet Page 7 HGTG18N120BN Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • HGTG18N120BN Datasheet
  • where to find HGTG18N120BN
  • ON Semiconductor

  • ON Semiconductor HGTG18N120BN
  • HGTG18N120BN PDF Datasheet
  • HGTG18N120BN Stock

  • HGTG18N120BN Pinout
  • Datasheet HGTG18N120BN
  • HGTG18N120BN Supplier

  • ON Semiconductor Distributor
  • HGTG18N120BN Price
  • HGTG18N120BN Distributor

HGTG18N120BN Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)54A
Current - Collector Pulsed (Icm)165A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 18A
Power - Max390W
Switching Energy800µJ (on), 1.8mJ (off)
Input TypeStandard
Gate Charge165nC
Td (on/off) @ 25°C23ns/170ns
Test Condition960V, 18A, 3Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

The Products You May Be Interested In

FID35-06C

IXYS

Manufacturer

IXYS

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

38A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 25A

Power - Max

125W

Switching Energy

1.1mJ (on), 600µJ (off)

Input Type

Standard

Gate Charge

140nC

Td (on/off) @ 25°C

-

Test Condition

300V, 25A, 10Ohm, 15V

Reverse Recovery Time (trr)

50ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

i4-Pac™-5

Supplier Device Package

ISOPLUS i4-PAC™

STGF14N60D

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

11A

Current - Collector Pulsed (Icm)

50A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 7A

Power - Max

33W

Switching Energy

-

Input Type

Standard

Gate Charge

-

Td (on/off) @ 25°C

-

Test Condition

390V, 7A, 10Ohm, 15V

Reverse Recovery Time (trr)

37ns

Operating Temperature

-

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220FP

IGP20N65F5XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop™

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

42A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 20A

Power - Max

125W

Switching Energy

160µJ (on), 60µJ (off)

Input Type

Standard

Gate Charge

48nC

Td (on/off) @ 25°C

20ns/165ns

Test Condition

400V, 10A, 32Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

PG-TO220-3

IRG4PC20UPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

13A

Current - Collector Pulsed (Icm)

52A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 6.5A

Power - Max

60W

Switching Energy

100µJ (on), 120µJ (off)

Input Type

Standard

Gate Charge

27nC

Td (on/off) @ 25°C

21ns/86ns

Test Condition

480V, 6.5A, 50Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

Manufacturer

IXYS

Series

XPT™, GenX3™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

33A

Current - Collector Pulsed (Icm)

140A

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 24A

Power - Max

90W

Switching Energy

550µJ (on), 800µJ (off)

Input Type

Standard

Gate Charge

39nC

Td (on/off) @ 25°C

23ns/150ns

Test Condition

400V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

36ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3 Full Pack

Supplier Device Package

TO-3P

Recently Sold

CMS16(TE12L,Q,M)

CMS16(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 3A MFLAT

LQH43CN100K03L

LQH43CN100K03L

Murata

FIXED IND 10UH 650MA 240 MOHM

LIS35DE

LIS35DE

STMicroelectronics

ACCEL 2.3-9.2G I2C/SPI 14LGA

SSC54HE3_A/H

SSC54HE3_A/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 5A DO214AB

MMBT4403LT1G

MMBT4403LT1G

ON Semiconductor

TRANS PNP 40V 0.6A SOT23

VRF150

VRF150

Microsemi

RF MOSFET N-CHANNEL 50V M174

FA-20H 12.0000MD30Z-K3

FA-20H 12.0000MD30Z-K3

EPSON

CRYSTAL 12.00 MHZ 10.0PF SMD

L7924CV

L7924CV

STMicroelectronics

IC REG LINEAR -24V 1.5A TO220AB

WSL2010R0100FEA18

WSL2010R0100FEA18

Vishay Dale

RES 0.01 OHM 1% 1W 2010

WSLP1206R0500FEA

WSLP1206R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1W 1206

ACPL-064L-500E

ACPL-064L-500E

Broadcom

OPTOISO 3.75KV 2CH PUSH PULL 8SO

ADM3310EACPZ

ADM3310EACPZ

Analog Devices

IC TRANSCEIVER FULL 3/5 32LFCSP