HGTG12N60B3
For Reference Only
| Part Number | HGTG12N60B3 |
| PNEDA Part # | HGTG12N60B3 |
| Description | IGBT 600V 27A 104W TO247 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,500 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 3 - Apr 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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HGTG12N60B3 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | HGTG12N60B3 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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HGTG12N60B3 Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 27A |
| Current - Collector Pulsed (Icm) | 110A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 12A |
| Power - Max | 104W |
| Switching Energy | 150µJ (on), 250µJ (off) |
| Input Type | Standard |
| Gate Charge | 51nC |
| Td (on/off) @ 25°C | 26ns/150ns |
| Test Condition | 480V, 12A, 25Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
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Manufacturer Infineon Technologies Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 7.8A Current - Collector Pulsed (Icm) 15.6A Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 3A Power - Max 52W Switching Energy 62µJ (on), 39µJ (off) Input Type Standard Gate Charge 13nC Td (on/off) @ 25°C 18ns/110ns Test Condition 400V, 3A, 100Ohm, 15V Reverse Recovery Time (trr) 77ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package D-Pak |
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