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HGTG40N60B3

HGTG40N60B3

For Reference Only

Part Number HGTG40N60B3
PNEDA Part # HGTG40N60B3
Description IGBT 600V 70A 290W TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,596
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Dec 20 - Dec 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGTG40N60B3 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGTG40N60B3
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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HGTG40N60B3 Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)70A
Current - Collector Pulsed (Icm)330A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 40A
Power - Max290W
Switching Energy1.05mJ (on), 800µJ (off)
Input TypeStandard
Gate Charge250nC
Td (on/off) @ 25°C47ns/170ns
Test Condition480V, 40A, 3Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Package / Case

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Supplier Device Package

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Manufacturer

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

425nC

Td (on/off) @ 25°C

52ns/220ns

Test Condition

400V, 80A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

50ns/190ns

Test Condition

600V, 25A, 10Ohm, 15V

Reverse Recovery Time (trr)

350ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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STMicroelectronics

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 3A

Power - Max

56W

Switching Energy

20µJ (on), 68µJ (off)

Input Type

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Gate Charge

13.6nC

Td (on/off) @ 25°C

12ns/76ns

Test Condition

390V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr)

21ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Manufacturer

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Series

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IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264 (IXGK)

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