HGTG30N60B3D
For Reference Only
| Part Number | HGTG30N60B3D |
| PNEDA Part # | HGTG30N60B3D |
| Description | IGBT 600V 60A 208W TO247 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 16,914 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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HGTG30N60B3D Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | HGTG30N60B3D |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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HGTG30N60B3D Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 60A |
| Current - Collector Pulsed (Icm) | 220A |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 30A |
| Power - Max | 208W |
| Switching Energy | 550µJ (on), 680µJ (off) |
| Input Type | Standard |
| Gate Charge | 170nC |
| Td (on/off) @ 25°C | 36ns/137ns |
| Test Condition | 480V, 30A, 3Ohm, 15V |
| Reverse Recovery Time (trr) | 55ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
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Manufacturer ON Semiconductor Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 54A Current - Collector Pulsed (Icm) 160A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 18A Power - Max 390W Switching Energy 1.9mJ (on), 1.8mJ (off) Input Type Standard Gate Charge 165nC Td (on/off) @ 25°C 23ns/170ns Test Condition 960V, 18A, 3Ohm, 15V Reverse Recovery Time (trr) 75ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |
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