Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

HGTG30N60C3D

HGTG30N60C3D

For Reference Only

Part Number HGTG30N60C3D
PNEDA Part # HGTG30N60C3D
Description IGBT 600V 63A 208W TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 16,188
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGTG30N60C3D Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGTG30N60C3D
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • HGTG30N60C3D Datasheet
  • where to find HGTG30N60C3D
  • ON Semiconductor

  • ON Semiconductor HGTG30N60C3D
  • HGTG30N60C3D PDF Datasheet
  • HGTG30N60C3D Stock

  • HGTG30N60C3D Pinout
  • Datasheet HGTG30N60C3D
  • HGTG30N60C3D Supplier

  • ON Semiconductor Distributor
  • HGTG30N60C3D Price
  • HGTG30N60C3D Distributor

HGTG30N60C3D Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)63A
Current - Collector Pulsed (Icm)252A
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 30A
Power - Max208W
Switching Energy1.05mJ (on), 2.5mJ (off)
Input TypeStandard
Gate Charge162nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)60ns
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

The Products You May Be Interested In

FGP40N6S2

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

180A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 20A

Power - Max

290W

Switching Energy

115µJ (on), 195µJ (off)

Input Type

Standard

Gate Charge

35nC

Td (on/off) @ 25°C

8ns/35ns

Test Condition

390V, 20A, 3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

NGTB40N120S3WG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

160A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 40A

Power - Max

454W

Switching Energy

2.2mJ (on), 1.1mJ (off)

Input Type

Standard

Gate Charge

212nC

Td (on/off) @ 25°C

12ns/145ns

Test Condition

600V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

163ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

240A

Current - Collector Pulsed (Icm)

700A

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 120A

Power - Max

1500W

Switching Energy

6.75mJ (on), 5.1mJ (off)

Input Type

Standard

Gate Charge

412nC

Td (on/off) @ 25°C

35ns/176ns

Test Condition

600V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PLUS247™-3

STGP19NC60WD

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Power - Max

125W

Switching Energy

81µJ (on), 125µJ (off)

Input Type

Standard

Gate Charge

53nC

Td (on/off) @ 25°C

25ns/90ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

31ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Manufacturer

IXYS

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

-

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

-

Power - Max

-

Switching Energy

-

Input Type

-

Gate Charge

-

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-

Mounting Type

-

Package / Case

-

Supplier Device Package

-

Recently Sold

CY62126EV30LL-45ZSXI

CY62126EV30LL-45ZSXI

Cypress Semiconductor

IC SRAM 1M PARALLEL 44TSOP II

FDS6675

FDS6675

ON Semiconductor

MOSFET P-CH 30V 11A 8-SOIC

NP5Q128A13ESFC0E

NP5Q128A13ESFC0E

Micron Technology Inc.

IC PCM 128M SPI 66MHZ 16SO W

USBUF01W6

USBUF01W6

STMicroelectronics

FILTER RC(PI) 33 OHM/47PF SMD

NE5534AN

NE5534AN

ON Semiconductor

IC OPAMP GP 1 CIRCUIT 8DIP

MLX90614ESF-DCI-000-SP

MLX90614ESF-DCI-000-SP

Melexis Technologies NV

SENSOR DGTL -40C-85C TO39

DLW5BTN101SQ2L

DLW5BTN101SQ2L

Murata

CMC 6A 2LN 100 OHM SMD

A2557SLBTR-T

A2557SLBTR-T

Allegro MicroSystems, LLC

IC DRIVER QUAD 60V 300MA 16SOIC

302R29W102KV4E

302R29W102KV4E

Johanson Dielectrics

CAP CER 1000PF 3KV X7R 1808

IRAMX16UP60B-2

IRAMX16UP60B-2

Infineon Technologies

IC PWR HYBRID 600V 16A SIP2

EDBA232B2PB-1D-F-D

EDBA232B2PB-1D-F-D

Micron Technology Inc.

IC DRAM 16G PARALLEL 533MHZ

A750KS337M1EAAE018

A750KS337M1EAAE018

KEMET

CAP ALUM POLY 330UF 20% 25V T/H