Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 504/999
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Vishay Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
4,644 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 7.7A (Tc) | 4V, 5V | 270mOhm @ 4.6A, 5V | 2V @ 250µA | 12nC @ 5V | ±10V | 490pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 15A 8-SOIC |
6,066 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta) | 2.5V, 10V | 4.5mOhm @ 22A, 10V | 1.5V @ 250µA | 50nC @ 4.5V | ±12V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Sanken |
MOSFET N-CH 250V 20A TO-220F |
8,550 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 20A (Ta) | 10V | 95mOhm @ 10A, 10V | 4.5V @ 1mA | - | ±30V | 1600pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 Full Pack |
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Infineon Technologies |
PLANAR >= 100V |
3,708 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 520mOhm @ 6.6A, 10V | 4V @ 250µA | 52nC @ 10V | ±30V | 1423pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 80A D2PAK |
5,598 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | ±20V | 3070pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 120A D2PAK |
6,480 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 5.8mOhm @ 75A, 10V | 4V @ 150µA | 110nC @ 10V | ±20V | 4750pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
HIGH POWER_NEW |
2,538 |
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ON Semiconductor |
MOSFET N-CH 40V 53A 378A 5DFN |
8,352 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 53A (Ta), 378A (Tc) | 10V | 0.7mOhm @ 50A, 10V | 4V @ 250µA | 128nC @ 10V | ±20V | 8400pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
-40V4.2MOHMSINGLE |
3,562 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta), 140A (Tc) | 4.5V, 10V | 4.2mOhm @ 50A, 10V | 2.6V @ 1mA | 136nC @ 10V | ±20V | 7400pF @ 20V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
-60V7.7MOHMSINGLE |
2,358 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta), 100A (Tc) | 4.5V, 10V | 7.7mOhm @ 50A, 10V | 2.6V @ 1mA | 160nC @ 10V | ±20V | 7700pF @ 20V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 600V 4VSON |
4,572 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 22.4A (Tc) | 10V | 180mOhm @ 9A, 10V | 4.5V @ 750µA | 44nC @ 10V | ±20V | 2080pF @ 100V | - | 176W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
LOW POWER_LEGACY |
6,174 |
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Nexperia |
MOSFET N-CH 80V 120A I2PAK |
2,610 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 3.5mOhm @ 25A, 10V | 4V @ 1mA | 139nC @ 10V | ±20V | 9800pF @ 30V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 30V 24A PPAK SO-8 |
3,294 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Tc) | 4.5V, 10V | 5.5mOhm @ 23.8A, 10V | 2.8V @ 250µA | 122nC @ 10V | ±20V | 5500pF @ 15V | - | 5W (Ta), 56W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 24A PPAK SO-8 |
2,448 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Tc) | 4.5V, 10V | 5.5mOhm @ 23.8A, 10V | 2.8V @ 250µA | 122nC @ 10V | ±20V | 5500pF @ 15V | - | 5W (Ta), 56W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 150V 25A TO252 |
3,816 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 25A (Tc) | 6V, 10V | 52mOhm @ 5A, 10V | 4V @ 250µA | 40nC @ 10V | ±20V | 1725pF @ 25V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 160A TO263-7 |
6,300 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 160A (Tc) | 6V, 10V | 3.9mOhm @ 100A, 10V | 3.5V @ 160µA | 117nC @ 10V | ±20V | 8410pF @ 50V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Texas Instruments |
MOSFET N-CH 25V 100A 8VSON |
5,580 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Ta) | 4.5V, 10V | 1.6mOhm @ 40A, 10V | 1.9V @ 250µA | 29nC @ 4.5V | +16V, -12V | 4100pF @ 12.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 287A 5DFN |
4,734 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 287A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 250µA | 52nC @ 4.5V | ±20V | 8900pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 650V 13.8A TO220 |
6,120 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 13.8A (Tc) | 10V | 280mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45nC @ 10V | ±20V | 950pF @ 100V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 60V 80A TO220-3 |
3,400 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 6V, 10V | 3.8mOhm @ 80A, 10V | 4V @ 250µA | 124nC @ 10V | ±20V | 6400pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 75V 164A TO220-3 |
2,430 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 164A (Tc) | 10V | 4.7Ohm @ 80A, 10V | 4.5V @ 250µA | 152nC @ 10V | ±20V | 9415pF @ 25V | - | 268W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 160A TO262 |
4,194 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 3.7mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 4340pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 160A D2PAK |
3,690 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 3.7mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 4340pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 900V 6.3A D2PAK |
6,426 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 6.3A (Tc) | 10V | 1.9Ohm @ 3.15A, 10V | 5V @ 250µA | 45nC @ 10V | ±30V | 2080pF @ 25V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 10A TO-220SIS |
6,534 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 10A (Ta) | 10V | 720mOhm @ 5A, 10V | 4V @ 1mA | 20nC @ 10V | ±30V | 1050pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 800V 7.4A TO247 |
3,636 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 7.4A (Tc) | 10V | 1.63Ohm @ 4A, 10V | 4.5V @ 250µA | 32nC @ 10V | ±30V | 1650pF @ 25V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 200V 31A D2PAK |
6,876 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 31A (Tc) | 10V | 75mOhm @ 15.5A, 10V | 5V @ 250µA | 78nC @ 10V | ±30V | 3100pF @ 25V | - | 3.13W (Ta), 180W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 3.6A D2PAK |
4,626 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4V @ 250µA | 31nC @ 10V | ±20V | 660pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 80V DFN5 |
8,244 |
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