IPL60R180P6AUMA1
For Reference Only
| Part Number | IPL60R180P6AUMA1 |
| PNEDA Part # | IPL60R180P6AUMA1 |
| Description | MOSFET N-CH 600V 4VSON |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,572 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPL60R180P6AUMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPL60R180P6AUMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPL60R180P6AUMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ P6 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 22.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 750µA |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2080pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 176W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-VSON-4 |
| Package / Case | 4-PowerTSFN |
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Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.3Ohm @ 2A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 640pF @ 25V FET Feature - Power Dissipation (Max) 104W (Tc) Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251A Package / Case TO-251-3 Stub Leads, IPak |
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Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V Rds On (Max) @ Id, Vgs 10Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.35nC @ 4.5V Vgs (Max) -8V Input Capacitance (Ciss) (Max) @ Vds 27.2pF @ 10V FET Feature - Power Dissipation (Max) 330mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
