Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 502/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Microchip Technology |
MOSFET P-CH 400V 0.086A 8SOIC |
5,508 |
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- | P-Channel | MOSFET (Metal Oxide) | 400V | 86mA (Tj) | 2.5V, 10V | 15Ohm @ 300mA, 10V | 2V @ 1mA | - | ±20V | 300pF @ 25V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 100V 140A TO220AB |
7,776 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 140A (Tc) | 10V | 5mOhm @ 13A, 10V | 4V @ 250µA | 111.7nC @ 10V | ±20V | 8474pF @ 50V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 75A TO-220AB |
7,956 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 10V | 3.3mOhm @ 140A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 5730pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 75A D2PAK |
5,256 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 10V | 3.3mOhm @ 140A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 5730pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V TO-220-3 |
8,208 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 98A (Tc) | - | 5.7mOhm @ 45A, 10V | 4V @ 250µA | 82nC @ 10V | - | 6000pF @ 25V | - | - | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 195A D2PAK |
8,676 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 6V, 10V | 2.4mOhm @ 100A, 10V | 3.7V @ 250µA | 279nC @ 10V | ±20V | 10034pF @ 25V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Diodes Incorporated |
MOSFET BVDSS: 651V 800V TO251 |
6,822 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 700V | 11A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4V @ 250µA | 18.2nC @ 10V | ±30V | 643pF @ 25V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3, IPak, Short Leads |
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Infineon Technologies |
MOSFET N-CH 30V 75A D2PAK |
7,290 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 10V | 2.4mOhm @ 75A, 10V | 4V @ 150µA | 240nC @ 10V | ±20V | 6320pF @ 25V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 40V 120A I2PAK |
4,644 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 1.6mOhm @ 25A, 10V | 4V @ 1mA | 136nC @ 10V | ±20V | 9710pF @ 20V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 80V 110A TO263 |
3,924 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 110A (Tc) | 10V | 3.6mOhm @ 80A, 10V | 4V @ 250µA | 112nC @ 10V | ±20V | 6280pF @ 40V | - | 176W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
T6 40V SG NCH SO8FL HEFET |
8,082 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 52A (Ta), 353A (Tc) | 10V | 0.8mOhm @ 50A, 10V | 4V @ 280µA | 110nC @ 10V | ±20V | 7288pF @ 20V | - | 3.9W (Ta), 179W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
T6 40V SG NCH SO8FL HEFET |
3,598 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 52A (Ta), 353A (Tc) | 10V | 0.8mOhm @ 50A, 10V | 4V @ 280µA | 110nC @ 10V | ±20V | 7288pF @ 20V | - | 3.9W (Ta), 179W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 40V 362A |
3,654 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 53A (Ta), 362A (Tc) | 4.5V, 10V | 700µOhm @ 50A, 10V | 2V @ 280µA | 149nC @ 10V | ±20V | 9400pF @ 20V | - | 3.9W (Ta), 179W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 7.5A TO-220SIS |
5,814 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 7.5A (Ta) | 10V | 1Ohm @ 4A, 10V | 4V @ 1mA | 20nC @ 10V | ±30V | 1050pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N CH 60V 75A TO-220AB |
5,976 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 75A (Tc) | 10V | 3.4mOhm @ 75A, 10V | 4V @ 150µA | 195nC @ 10V | ±20V | 6600pF @ 48V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V TO220-3 TU |
3,798 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 220A (Tc) | 10V | 6mOhm @ 20A, 10V | 3V @ 250µA | 64.7nC @ 10V | ±20V | 4043pF @ 20V | - | 240W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 6.2A IPAK |
4,680 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Ta) | 10V | 820mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12nC @ 10V | ±30V | 390pF @ 300V | Super Junction | 60W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 200V 4.6A DIRECTFET |
5,652 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 4.6A (Ta), 26A (Tc) | 10V | 59.9mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48nC @ 10V | ±20V | 2290pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MZ | DirectFET™ Isometric MZ |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9.7A 5DFN |
4,860 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | ±30V | 700pF @ 300V | Super Junction | 88.3W (Tc) | 150°C (TJ) | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
8,802 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 150V 21A D2PAK |
2,628 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 21A (Tc) | 10V | 82mOhm @ 12A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 1300pF @ 25V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 30V 10.8A SO8FL |
3,024 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 10.8A SO8FL |
8,514 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V SO8FL |
5,742 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 30V 10.8A SO8FL |
8,046 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 400V 9.5A TO-220F |
6,426 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 9.5A (Tc) | 10V | 270mOhm @ 4.75A, 10V | 5V @ 250µA | 60nC @ 10V | ±30V | 2300pF @ 25V | - | 56W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 105A TO263 |
6,588 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 14.5A (Ta), 105A (Tc) | 6V, 10V | 4.1mOhm @ 20A, 10V | 2.2V @ 250µA | 126nC @ 10V | ±20V | 6775pF @ 50V | - | 2.1W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 120A TO263 |
3,438 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V 36A SO8FL |
13,051 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 36A (Ta), 235A (Tc) | 4.5V, 10V | 1.5mOhm @ 50A, 10V | 2V @ 250µA | 91nC @ 10V | ±20V | 6660pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET_(75V 120V( |
3,562 |
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OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 4.5V, 10V | 4mOhm @ 50A, 10V | 2V @ 90µA | 78nC @ 10V | ±20V | 5200pF @ 50V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |