Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 503/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET_(75V 120V( |
7,884 |
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OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 4mOhm @ 50A, 10V | 3.8V @ 90µA | 78nC @ 10V | ±20V | 5200pF @ 50V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 40V 46A 300A 5DFN |
4,176 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 46A (Ta), 300A (Tc) | 10V | 0.92mOhm @ 50A, 10V | 3.5V @ 250µA | 86nC @ 10V | ±20V | 6100pF @ 25V | - | 3.9W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 40V 120A TO262-3-1 |
3,258 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 2.1mOhm @ 100A, 10V | 4V @ 110µA | 134nC @ 10V | ±20V | 10740pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH TO263-7 |
6,066 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 160A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 150µA | 112nC @ 10V | ±20V | 7750pF @ 25V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Vishay Siliconix |
MOSFET N-CH 500V 8A D2PAK |
5,796 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 1100pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 4VSON |
2,304 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 16.6A (Tc) | 10V | 210mOhm @ 7.3A, 10V | 4.5V @ 700µA | 68nC @ 10V | ±20V | 1850pF @ 100V | - | 151W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
LOW POWER_LEGACY |
7,290 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 16.6A (Tc) | 10V | 210mOhm @ 7.3A, 10V | 4.5V @ 700µA | 68nC @ 10V | ±20V | 1850pF @ 100V | - | 151W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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ON Semiconductor |
MOSFET N-CH 600V TO-220F-3 |
4,986 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 340mOhm @ 8.5A, 10V | 5V @ 250µA | 65nC @ 10V | ±30V | 3040pF @ 25V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 60V 287A 5DFN |
7,902 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 287A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 250µA | 52nC @ 4.5V | ±20V | 8900pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 40V 312A SO8FL |
5,688 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Ta), 330A (Tc) | 4.5V, 10V | 0.9mOhm @ 50A, 10V | 2V @ 250µA | 143nC @ 10V | ±20V | 8862pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH TO263-7 |
7,704 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 240A (Tc) | 4.5V, 10V | 0.92mOhm @ 100A, 10V | 2.2V @ 180µA | 300nC @ 10V | ±16V | 20300pF @ 25V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Vishay Siliconix |
MOSFET P-CH 100V 12A D2PAK |
4,842 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 12A (Tc) | 10V | 300mOhm @ 7.2A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 860pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
LOW POWER_LEGACY |
4,788 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 12V 17A 8-SOIC |
8,424 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 12V | 17A (Ta) | 2.5V, 4.5V | 3mOhm @ 25A, 4.5V | 600mV @ 250µA (Min) | 60nC @ 4.5V | ±8V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V,TO220-3,TU |
8,514 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 7.2mOhm @ 20A, 10V | 4V @ 250µA | 36.3nC @ 10V | ±20V | 1940pF @ 30V | - | 2.8W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V TO220-3 |
2,538 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 225mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | ±20V | 996pF @ 400V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 100V 40A TO252 |
5,940 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 10V | 25mOhm @ 40A, 10V | 3V @ 250µA | 60nC @ 10V | ±20V | 2400pF @ 25V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 300V 12A TO-220F |
4,140 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 300V | 12A (Tc) | 10V | 160mOhm @ 6A, 10V | 5V @ 250µA | 60nC @ 10V | ±30V | 2200pF @ 25V | - | 56W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 11A TO-220SIS |
6,030 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 450V | 11A (Ta) | 10V | 620mOhm @ 5.5A, 10V | 4V @ 1mA | 20nC @ 10V | ±30V | 1050pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 800V 17A TO220F |
2,232 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 4.5V @ 1.7mA | 75nC @ 10V | ±20V | 3205pF @ 100V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 13.8A TO262 |
3,618 |
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CoolMOS™ E6 | N-Channel | MOSFET (Metal Oxide) | 650V | 13.8A (Tc) | 10V | 280mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45nC @ 10V | ±20V | 950pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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IXYS |
MOSFET N-CH 1000V 1A TO-252 |
8,820 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 1A (Tc) | 10V | 15Ohm @ 500mA, 10V | 4.5V @ 50µA | 15.5nC @ 10V | ±20V | 331pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 55V 90A TO-220 |
2,070 |
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TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 55V | 90A (Tc) | 10V | 8.4mOhm @ 25A, 10V | 4V @ 250µA | 42nC @ 10V | ±20V | 2770pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 600V 4A TO-263AA |
8,262 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.2Ohm @ 2A, 10V | 5V @ 250µA | 6.9nC @ 10V | ±30V | 365pF @ 25V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 1200V 0.2A TO-220 |
6,804 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 200mA (Tc) | 10V | 75Ohm @ 100mA, 10V | 4V @ 100µA | 4.7nC @ 10V | ±20V | 104pF @ 25V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET 60V 100A TO220-3 |
8,442 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3.65mOhm @ 100A, 10V | 4V @ 250µA | 95.4nC @ 10V | ±20V | 4556pF @ 30V | - | 2.8W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 11A POWERPAK8X8 |
5,220 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 339mOhm @ 5.5A, 10V | 4V @ 250µA | 62nC @ 10V | ±30V | 1076pF @ 100V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 20A TO263 |
4,626 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Ta), 140A (Tc) | 10V | 2.2mOhm @ 20A, 10V | 3.2V @ 250µA | 180nC @ 10V | ±20V | 14200pF @ 30V | - | 1.9W (Ta), 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
7,416 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 7.7A (Tc) | 4V, 5V | 270mOhm @ 4.6A, 5V | 2V @ 250µA | 12nC @ 5V | ±10V | 490pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
3,114 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 7.7A (Tc) | 4V, 5V | 270mOhm @ 4.6A, 5V | 2V @ 250µA | 12nC @ 5V | ±10V | 490pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |