Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 505/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO-262 |
8,262 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 40A TO-220AB |
5,616 |
|
U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Ta) | - | 15mOhm @ 20A, 10V | 4V @ 1mA | 84nC @ 10V | - | 4000pF @ 10V | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 235A 5DFN |
4,050 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 235A (Tc) | 4.5V, 10V | 1.5mOhm @ 50A, 10V | 2V @ 250µA | 41nC @ 4.5V | ±20V | 6660pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Vishay Siliconix |
MOSFET N-CH 30V 17A 8-SOIC |
6,534 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta) | 4.5V, 10V | 3.2mOhm @ 25A, 10V | 1.8V @ 250µA | 80nC @ 4.5V | ±12V | 8340pF @ 15V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Microchip Technology |
MOSFET P-CH 60V 640MA TO92-3 |
4,824 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 640mA (Tj) | 5V, 10V | 900mOhm @ 3.5A, 10V | 3.5V @ 10mA | - | ±20V | 450pF @ 25V | - | 740mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 15A TO-220SIS |
5,238 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 15A (Ta) | 10V | 300mOhm @ 7.5A, 10V | 4V @ 1mA | 40nC @ 10V | ±30V | 2300pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 71A TO220 |
8,838 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 71A (Tc) | 10V | 4.2mOhm @ 43A, 10V | 4V @ 150µA | 135nC @ 10V | ±20V | 4685pF @ 50V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 550V 17A TO-263 |
2,592 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 17A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 45nC @ 10V | ±20V | 1800pF @ 100V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Texas Instruments |
MOSFET N-CH 30V 100A 8VSON |
8,334 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Ta) | 4.5V, 10V | 1.4mOhm @ 40A, 10V | 1.65V @ 250µA | 39nC @ 4.5V | ±20V | 7020pF @ 15V | - | 3.1W (Ta), 191W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 75V 100A TO263-3 |
3,672 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 4.5V, 10V | 6.5mOhm @ 80A, 10V | 2V @ 250µA | 246nC @ 10V | ±20V | 5400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 100A TO263-3 |
5,778 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 10V | 6.8mOhm @ 80A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 4700pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 85A TO-220 |
8,424 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 85A (Tc) | 10V | 7.5mOhm @ 30A, 10V | 4V @ 250µA | 88nC @ 10V | ±20V | 4560pF @ 30V | - | 268W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 7A TO-220SIS |
7,506 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Ta) | 10V | 600mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | ±30V | 490pF @ 300V | Super Junction | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH 650V 2A X2 TO-220 |
2,196 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 2A (Tc) | 10V | 2.3Ohm @ 1A, 10V | 5V @ 250µA | 4.3nC @ 10V | ±30V | 180pF @ 25V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
MOSFET N-CH 650V 4A X2 TO-220 |
3,454 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 850mOhm @ 2A, 10V | 5V @ 250µA | 8.3nC @ 10V | ±30V | 455pF @ 25V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 60V 200A TO220-3 |
8,964 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 200A (Ta) | 4.5V, 10V | 44mOhm @ 100A, 10V | 2.2V @ 250µA | 57nC @ 10V | ±20V | 5070pF @ 30V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 40V 312A SO8FL |
3,580 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Ta), 330A (Tc) | 4.5V, 10V | 0.9mOhm @ 50A, 10V | 2V @ 250µA | 143nC @ 10V | ±20V | 8862pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Infineon Technologies |
HIGH POWER_LEGACY |
6,966 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 700µA | 68nC @ 10V | ±20V | 1850pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 6.7A TO220AB |
7,416 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 6.7A (Tc) | 10V | 500mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
LOW POWER_NEW |
6,678 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
LOW POWER_NEW |
7,776 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET BVDSS: 501V-650V ITO-220A |
8,838 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 9.7A TO-220 |
5,094 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | ±30V | 720pF @ 300V | - | 30W (Tc) | - | Through Hole | TO-220 | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH TO263-7 |
7,524 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 4.5V, 10V | 1.2mOhm @ 100A, 10V | 2.2V @ 140µA | 245nC @ 10V | +20V, -16V | 19100pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Texas Instruments |
MOSFET N-CH 40V 100A TO220-3 |
6,624 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 2.9mOhm @ 100A, 10V | 2.1V @ 250µA | 62nC @ 10V | ±20V | 4680pF @ 20V | - | 259W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 80V D2PAK |
5,166 |
|
SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 11A (Ta), 105A (Tc) | 7V, 10V | 6.9mOhm @ 20A, 10V | 3.7V @ 250µA | 81nC @ 10V | ±25V | 4870pF @ 40V | - | 2.1W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 7.8A IPAK |
5,652 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 7.8A (Ta) | 10V | 670mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16nC @ 10V | ±30V | 570pF @ 300V | - | 80W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 7A IPAK-3 |
2,466 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Ta) | 10V | 600mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | ±30V | 490pF @ 300V | - | 60W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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IXYS |
MOSFET N-CH 600V 10A D2-PAK |
2,700 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 650V 24A TO220F |
3,708 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 125mOhm @ 12A, 10V | 4.5V @ 2.4mA | 44nC @ 10V | ±30V | 1790pF @ 400V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |