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FQB8N90CTM

FQB8N90CTM

For Reference Only

Part Number FQB8N90CTM
PNEDA Part # FQB8N90CTM
Description MOSFET N-CH 900V 6.3A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,426
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQB8N90CTM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQB8N90CTM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQB8N90CTM, FQB8N90CTM Datasheet (Total Pages: 11, Size: 541.24 KB)
PDFFQB8N90CTM Datasheet Cover
FQB8N90CTM Datasheet Page 2 FQB8N90CTM Datasheet Page 3 FQB8N90CTM Datasheet Page 4 FQB8N90CTM Datasheet Page 5 FQB8N90CTM Datasheet Page 6 FQB8N90CTM Datasheet Page 7 FQB8N90CTM Datasheet Page 8 FQB8N90CTM Datasheet Page 9 FQB8N90CTM Datasheet Page 10 FQB8N90CTM Datasheet Page 11

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FQB8N90CTM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.9Ohm @ 3.15A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2080pF @ 25V
FET Feature-
Power Dissipation (Max)171W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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