Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 501/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Sanken |
MOSFET N-CH 900V TO-220F |
6,030 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 3A (Ta) | 10V | 5Ohm @ 1.5A, 10V | 4V @ 1mA | - | ±30V | 600pF @ 10V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 1000V 4A TO247 |
7,560 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 4A (Tc) | 10V | 4.2Ohm @ 2.5A, 10V | 4.5V @ 250µA | 23nC @ 10V | ±30V | 1150pF @ 25V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 4VSON |
7,272 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 195mOhm @ 2.9A, 10V | 4V @ 290µA | 23nC @ 10V | ±20V | 1150pF @ 400V | - | 75W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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ON Semiconductor |
MOSFET N-CH 40V 312A SO8FL |
2,862 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Ta), 330A (Tc) | 4.5V, 10V | 0.9mOhm @ 50A, 10V | 2V @ 250µA | 143nC @ 10V | ±20V | 8862pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 150V 33A D2PAK |
2,250 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 56mOhm @ 20A, 10V | 5.5V @ 250µA | 90nC @ 10V | ±30V | 2020pF @ 25V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 162A D2PAK |
4,680 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 162A (Tc) | 10V | 4mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 7360pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 160A D2PAK |
7,974 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 4.3V, 10V | 4mOhm @ 95A, 10V | 3V @ 250µA | 140nC @ 5V | ±20V | 6600pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO262-3 |
4,716 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 7.2mOhm @ 80A, 10V | 3.5V @ 90µA | 68nC @ 10V | ±20V | 4910pF @ 50V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 650V 190MOHM TO220 I |
7,686 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 17A (Tc) | 10V | 190mOhm @ 8.5A, 10V | 4.5V @ 1.7mA | 33nC @ 10V | ±30V | 1350pF @ 400V | - | 144W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 18A 5DFB |
6,264 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 3.6A (Ta), 18A (Tc) | 10V | 250mOhm @ 10A, 10V | 4.1V @ 250µA | 20nC @ 10V | ±30V | 1038pF @ 100V | - | 8.3W (Ta), 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-DFN-EP (8x8) | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 600V 13.8A TO220-FP |
7,416 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 13.8A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | ±20V | 950pF @ 100V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 13.8A TO262 |
2,304 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 13.8A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | ±20V | 950pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 600V 13.8A TO220 |
3,546 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 13.8A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | ±20V | 950pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 13.8A TO220 |
2,610 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 13.8A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | ±20V | 950pF @ 100V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 13.8A TO220 |
4,122 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 13.8A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | ±20V | 950pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 10A TO-262 |
4,518 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 36nC @ 10V | ±30V | 1030pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 80V 166A POWER56 |
7,470 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 166A (Tc) | 6V, 10V | 2.7mOhm @ 68A, 10V | 4V @ 380µA | 84nC @ 10V | ±20V | 6240pF @ 40V | - | 138W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 250V 51A TO-220F |
6,480 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 51A (Tc) | 10V | 60mOhm @ 25.5A, 10V | 5V @ 250µA | 70nC @ 10V | ±30V | 3410pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 (Y-Forming) | TO-220-3 Full Pack, Formed Leads |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
7,254 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 8.5mOhm @ 52A, 10V | 2V @ 125µA | 105nC @ 10V | ±20V | 2620pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Diodes Incorporated |
MOSFET N-CH 650V 9A TO220AB |
6,408 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 1.3Ohm @ 4.5A, 10V | 5V @ 250µA | 39nC @ 10V | ±30V | 2310pF @ 25V | - | 165W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 7.5A TO-220SIS |
6,426 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 7.5A (Ta) | 10V | 1.07Ohm @ 3.8A, 10V | 4V @ 1mA | 16nC @ 10V | ±30V | 800pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CHANNEL 650V 18A TO220 |
2,502 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 18A (Tc) | 10V | 180mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | ±20V | 1081pF @ 400V | - | 26W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 25V 29A MX |
7,452 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 29A (Ta), 168A (Tc) | 4.5V, 10V | 1.6mOhm @ 29A, 10V | 2.1V @ 100µA | 38nC @ 4.5V | ±16V | 3480pF @ 13V | - | 2.1W (Ta), 69W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 30V 75A TO-220AB |
4,824 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 10V | 2.4mOhm @ 75A, 10V | 4V @ 150µA | 240nC @ 10V | ±20V | 6320pF @ 25V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N CH 300V 19A D2PAK |
5,112 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 300V | 19A (Tc) | 10V | 185mOhm @ 11A, 10V | 5V @ 150µA | 57nC @ 10V | ±20V | 2340pF @ 25V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 6.6A TO220-FP |
4,122 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 6.6A (Tc) | 10V | 700mOhm @ 4.6A, 10V | 5V @ 300µA | 47nC @ 10V | ±20V | 790pF @ 25V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 3.6A TO-220AB |
7,560 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250µA | 23nC @ 10V | ±30V | 510pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 8HSOF |
2,934 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 250A (Tc) | 10V | 1.7mOhm @ 100A, 10V | 4V @ 80µA | 100nC @ 10V | ±20V | 7900pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
8,964 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 9.1mOhm @ 50A, 10V | 4V @ 125µA | 80nC @ 10V | ±20V | 2360pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 7.8A TO-220SIS |
6,552 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 7.8A (Ta) | 10V | 650mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16nC @ 10V | ±30V | 570pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |