IRFB11N50APBF

For Reference Only
Part Number | IRFB11N50APBF |
PNEDA Part # | IRFB11N50APBF_43 |
Description | PLANAR >= 100V |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 3,708 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRFB11N50APBF Resources
Brand | Infineon Technologies |
ECAD Module |
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Mfr. Part Number | IRFB11N50APBF |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IRFB11N50APBF Specifications
Manufacturer | Infineon Technologies |
Series | HEXFET® |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 520mOhm @ 6.6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 52nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1423pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 170W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
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