IGB03N120H2ATMA1

For Reference Only
Part Number | IGB03N120H2ATMA1 |
PNEDA Part # | IGB03N120H2ATMA1 |
Description | IGBT 1200V 9.6A 62.5W TO263-3 |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 5,256 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Apr 5 - Apr 10 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
IGB03N120H2ATMA1 Resources
Brand | Infineon Technologies |
ECAD Module |
![]() |
Mfr. Part Number | IGB03N120H2ATMA1 |
Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
Payment Method






- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode





- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IGB03N120H2ATMA1 Datasheet
- where to find IGB03N120H2ATMA1
- Infineon Technologies
- Infineon Technologies IGB03N120H2ATMA1
- IGB03N120H2ATMA1 PDF Datasheet
- IGB03N120H2ATMA1 Stock
- IGB03N120H2ATMA1 Pinout
- Datasheet IGB03N120H2ATMA1
- IGB03N120H2ATMA1 Supplier
- Infineon Technologies Distributor
- IGB03N120H2ATMA1 Price
- IGB03N120H2ATMA1 Distributor
IGB03N120H2ATMA1 Specifications
Manufacturer | Infineon Technologies |
Series | - |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 9.6A |
Current - Collector Pulsed (Icm) | 9.9A |
Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 3A |
Power - Max | 62.5W |
Switching Energy | 290µJ |
Input Type | Standard |
Gate Charge | 22nC |
Td (on/off) @ 25°C | 9.2ns/281ns |
Test Condition | 800V, 3A, 82Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | PG-TO263-3 |
The Products You May Be Interested In
Manufacturer IXYS Series BIMOSFET™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 3000V Current - Collector (Ic) (Max) 30A Current - Collector Pulsed (Icm) 100A Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 12A Power - Max 160W Switching Energy - Input Type Standard Gate Charge 62nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) 1.4µs Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AD (IXBH) |
Manufacturer IXYS Series GenX3™, XPT™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 900V Current - Collector (Ic) (Max) 310A Current - Collector Pulsed (Icm) 840A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 140A Power - Max 1630W Switching Energy 4.3mJ (on), 4mJ (off) Input Type Standard Gate Charge 330nC Td (on/off) @ 25°C 40ns/145ns Test Condition 450V, 100A, 1Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-264-3, TO-264AA Supplier Device Package TO-264 (IXYK) |
Manufacturer ON Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 160A Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A Power - Max 555W Switching Energy 2.24mJ (on), 1.02mJ (off) Input Type Standard Gate Charge 370nC Td (on/off) @ 25°C 44ns/464ns Test Condition 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr) 65ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-4 Supplier Device Package TO-247 |
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 47A Current - Collector Pulsed (Icm) 54A Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 18A Power - Max 206W Switching Energy 95µJ (on), 350µJ (off) Input Type Standard Gate Charge 35nC Td (on/off) @ 25°C 40ns/105ns Test Condition 400V, 18A, 22Ohm, 15V Reverse Recovery Time (trr) 100ns Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D2PAK |
Manufacturer STMicroelectronics Series PowerMESH™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 345V Current - Collector (Ic) (Max) 40A Current - Collector Pulsed (Icm) 80A Vce(on) (Max) @ Vge, Ic 1.7V @ 4.5V, 15A Power - Max 176W Switching Energy - Input Type Logic Gate Charge 49nC Td (on/off) @ 25°C 1.1µs/26.5µs Test Condition 300V, 15A, 5V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package I2PAK (TO-262) |