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IGB15N65S5ATMA1

IGB15N65S5ATMA1

For Reference Only

Part Number IGB15N65S5ATMA1
PNEDA Part # IGB15N65S5ATMA1
Description IGBT PRODUCTS
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,060
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IGB15N65S5ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIGB15N65S5ATMA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
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Notes

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IGB15N65S5ATMA1 Specifications

ManufacturerInfineon Technologies
Series*
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

240A

Current - Collector Pulsed (Icm)

440A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 75A

Power - Max

1150W

Switching Energy

4.5mJ (on), 2.7mJ (off)

Input Type

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Gate Charge

157nC

Td (on/off) @ 25°C

22ns/182ns

Test Condition

600V, 50A, 3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

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Power - Max

52W

Switching Energy

200µJ (on), 130µJ (off)

Input Type

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Gate Charge

116nC

Td (on/off) @ 25°C

38ns/149ns

Test Condition

400V, 20A, 15V

Reverse Recovery Time (trr)

40ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3 Full Pack

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

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Power - Max

-

Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

Through Hole

Package / Case

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Supplier Device Package

TO-220AB

Manufacturer

IXYS

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

3.3V @ 15V, 35A

Power - Max

400W

Switching Energy

900µJ (on), 3.8mJ (off)

Input Type

Standard

Gate Charge

140nC

Td (on/off) @ 25°C

40ns/270ns

Test Condition

960V, 35A, 3Ohm, 15V

Reverse Recovery Time (trr)

40ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P

IGP06N60TXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop®

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

12A

Current - Collector Pulsed (Icm)

18A

Vce(on) (Max) @ Vge, Ic

2.05V @ 15V, 6A

Power - Max

88W

Switching Energy

200µJ

Input Type

Standard

Gate Charge

42nC

Td (on/off) @ 25°C

9ns/130ns

Test Condition

400V, 6A, 23Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

PG-TO220-3

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