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IGA03N120H2XKSA1

IGA03N120H2XKSA1

For Reference Only

Part Number IGA03N120H2XKSA1
PNEDA Part # IGA03N120H2XKSA1
Description IGBT 1200V 3A 29W TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,084
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IGA03N120H2XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIGA03N120H2XKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IGA03N120H2XKSA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)3A
Current - Collector Pulsed (Icm)9A
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 3A
Power - Max29W
Switching Energy290µJ
Input TypeStandard
Gate Charge8.6nC
Td (on/off) @ 25°C9.2ns/281ns
Test Condition800V, 3A, 82Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackagePG-TO220-3

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

80µJ (on), 70µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

195nC

Td (on/off) @ 25°C

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Test Condition

600V, 20A, 15Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

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ON Semiconductor

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

120nC

Td (on/off) @ 25°C

25ns/115ns

Test Condition

400V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Supplier Device Package

I2PAK (TO-262)

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

480V, 16A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263 AA (IXSA)

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