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HGTP7N60A4

HGTP7N60A4

For Reference Only

Part Number HGTP7N60A4
PNEDA Part # HGTP7N60A4
Description IGBT 600V 34A 125W TO220AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 19,140
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGTP7N60A4 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGTP7N60A4
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
HGTP7N60A4, HGTP7N60A4 Datasheet (Total Pages: 8, Size: 242.48 KB)
PDFHGTP7N60A4-F102 Datasheet Cover
HGTP7N60A4-F102 Datasheet Page 2 HGTP7N60A4-F102 Datasheet Page 3 HGTP7N60A4-F102 Datasheet Page 4 HGTP7N60A4-F102 Datasheet Page 5 HGTP7N60A4-F102 Datasheet Page 6 HGTP7N60A4-F102 Datasheet Page 7 HGTP7N60A4-F102 Datasheet Page 8

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HGTP7N60A4 Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)34A
Current - Collector Pulsed (Icm)56A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 7A
Power - Max125W
Switching Energy55µJ (on), 60µJ (off)
Input TypeStandard
Gate Charge37nC
Td (on/off) @ 25°C11ns/100ns
Test Condition390V, 7A, 25Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Infineon Technologies

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

24nC

Td (on/off) @ 25°C

22ns/237ns

Test Condition

400V, 4A, 67Ohm, 15V

Reverse Recovery Time (trr)

180ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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STMicroelectronics

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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-55°C ~ 175°C (TJ)

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Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

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STMicroelectronics

Manufacturer

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Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

70A

Current - Collector Pulsed (Icm)

230A

Vce(on) (Max) @ Vge, Ic

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Power - Max

250W

Switching Energy

302µJ (on), 349µJ (off)

Input Type

Standard

Gate Charge

126nC

Td (on/off) @ 25°C

33ns/168ns

Test Condition

390V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 Long Leads

Manufacturer

IXYS

Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 30A

Power - Max

300W

Switching Energy

3.47mJ (on), 2.16mJ (off)

Input Type

Standard

Gate Charge

87nC

Td (on/off) @ 25°C

16ns/127ns

Test Condition

960V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263 (IXGA)

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