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APT30GP60BG

APT30GP60BG

For Reference Only

Part Number APT30GP60BG
PNEDA Part # APT30GP60BG
Description IGBT 600V 100A 463W TO247
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 2,574
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT30GP60BG Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT30GP60BG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT30GP60BG Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS 7®
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)100A
Current - Collector Pulsed (Icm)100A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 30A
Power - Max463W
Switching Energy260µJ (on), 250µJ (off)
Input TypeStandard
Gate Charge90nC
Td (on/off) @ 25°C13ns/55ns
Test Condition400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247 [B]

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

68A

Vce(on) (Max) @ Vge, Ic

4V @ 15V, 17A

Power - Max

150W

Switching Energy

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Input Type

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Gate Charge

120nC

Td (on/off) @ 25°C

100ns/500ns

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

190W

Switching Energy

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Input Type

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65nC

Td (on/off) @ 25°C

36ns/160ns

Test Condition

850V, 16A, 10Ohm, 15V

Reverse Recovery Time (trr)

230ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

Manufacturer

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Series

HiPerFAST™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

70µJ (on), 600µJ (off)

Input Type

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Td (on/off) @ 25°C

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Test Condition

480V, 9A, 50Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

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APT33GF120BRG

Microsemi

Manufacturer

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Series

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IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

52A

Current - Collector Pulsed (Icm)

104A

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 25A

Power - Max

297W

Switching Energy

2.8mJ (on), 2.8mJ (off)

Input Type

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Gate Charge

170nC

Td (on/off) @ 25°C

25ns/210ns

Test Condition

-

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 [B]

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