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APT20GN60BDQ1G

APT20GN60BDQ1G

For Reference Only

Part Number APT20GN60BDQ1G
PNEDA Part # APT20GN60BDQ1G
Description IGBT 600V 40A 136W TO247
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 8,172
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT20GN60BDQ1G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT20GN60BDQ1G
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT20GN60BDQ1G Specifications

ManufacturerMicrosemi Corporation
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)40A
Current - Collector Pulsed (Icm)60A
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 20A
Power - Max136W
Switching Energy230µJ (on), 580µJ (off)
Input TypeStandard
Gate Charge120nC
Td (on/off) @ 25°C9ns/140ns
Test Condition400V, 20A, 4.3Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247 [B]

The Products You May Be Interested In

Manufacturer

IXYS

Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

170A

Vce(on) (Max) @ Vge, Ic

1.4V @ 15V, 24A

Power - Max

190W

Switching Energy

700µJ (on), 2.4mJ (off)

Input Type

Standard

Gate Charge

66nC

Td (on/off) @ 25°C

18ns/300ns

Test Condition

480V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

26ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

STGW25M120DF3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

50A

Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 25A

Power - Max

375W

Switching Energy

850µJ (on), 1.3mJ (off)

Input Type

Standard

Gate Charge

85nC

Td (on/off) @ 25°C

28ns/150ns

Test Condition

600V, 25A, 15Ohm, 15V

Reverse Recovery Time (trr)

265ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

Manufacturer

IXYS

Series

XPT™, GenX3™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

15A

Current - Collector Pulsed (Icm)

50A

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 10A

Power - Max

53W

Switching Energy

240µJ (on), 170µJ (off)

Input Type

Standard

Gate Charge

18nC

Td (on/off) @ 25°C

20ns/77ns

Test Condition

400V, 10A, 50Ohm, 15V

Reverse Recovery Time (trr)

26ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack, Isolated Tab

Supplier Device Package

TO-220 Isolated Tab

Manufacturer

IXYS

Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1400V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

3.6V @ 15V, 28A

Power - Max

300W

Switching Energy

3.6mJ (on), 3.9mJ (off)

Input Type

Standard

Gate Charge

88nC

Td (on/off) @ 25°C

16ns/190ns

Test Condition

960V, 28A, 5Ohm, 15V

Reverse Recovery Time (trr)

350ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264 (IXGK)

STGWA25H120F2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

50A

Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 25A

Power - Max

375W

Switching Energy

600µJ (on), 700µJ (off)

Input Type

Standard

Gate Charge

100nC

Td (on/off) @ 25°C

29ns/130ns

Test Condition

600V, 25A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

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