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APT25GN120BG

APT25GN120BG

For Reference Only

Part Number APT25GN120BG
PNEDA Part # APT25GN120BG
Description IGBT 1200V 67A 272W TO247
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 7,920
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT25GN120BG Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT25GN120BG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT25GN120BG Specifications

ManufacturerMicrosemi Corporation
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)67A
Current - Collector Pulsed (Icm)75A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 25A
Power - Max272W
Switching Energy2.15µJ (off)
Input TypeStandard
Gate Charge155nC
Td (on/off) @ 25°C22ns/280ns
Test Condition800V, 25A, 1Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247 [B]

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Current - Collector Pulsed (Icm)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

480V, 50A, 3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

400V, 100A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

350nC

Td (on/off) @ 25°C

57ns/240ns

Test Condition

600V, 25A, 10Ohm, 15V

Reverse Recovery Time (trr)

480ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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IGBT Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Operating Temperature

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Supplier Device Package

TO-247-4L

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