Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 2029/2164

Part Number	Description	In Stock
AOTF20B65M2 Alpha & Omega Semiconductor	Transistors - IGBTs - Single IGBT 650V 20A TO220 Manufacturer: Alpha & Omega Semiconductor Inc. Series: Alpha IGBT™ IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A Power - Max: 45W Switching Energy: 580µJ (on), 280µJ (off) Input Type: Standard Gate Charge: 46nC Td (on/off) @ 25°C: 26ns/123ns Test Condition: 400V, 20A, 15Ohm, 15V Reverse Recovery Time (trr): 292ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	In Stock16,308
AOTF5B60D Alpha & Omega Semiconductor	Transistors - IGBTs - Single IGBT 600V 10A 31.2W TO220F Manufacturer: Alpha & Omega Semiconductor Inc. Series: Alpha IGBT™ IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 20A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A Power - Max: 31.2W Switching Energy: 140µJ (on), 40µJ (off) Input Type: Standard Gate Charge: 9.4nC Td (on/off) @ 25°C: 12ns/83ns Test Condition: 400V, 5A, 60Ohm, 15V Reverse Recovery Time (trr): 98ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220-3F	In Stock6,498
AOTF5B65M1 Alpha & Omega Semiconductor	Transistors - IGBTs - Single IGBT 650V 5A TO220 Manufacturer: Alpha & Omega Semiconductor Inc. Series: Alpha IGBT™ IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 10A Current - Collector Pulsed (Icm): 15A Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A Power - Max: 25W Switching Energy: 80µJ (on), 70µJ (off) Input Type: Standard Gate Charge: 14nC Td (on/off) @ 25°C: 8.5ns/106ns Test Condition: 400V, 5A, 60Ohm, 15V Reverse Recovery Time (trr): 195ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	In Stock19,752
AOTS40B65H1 Alpha & Omega Semiconductor	Transistors - IGBTs - Single IGBT 650V 40A TO220 Manufacturer: Alpha & Omega Semiconductor Inc. Series: Alpha IGBT™ IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 300W Switching Energy: 1.27mJ (on), 460µJ (off) Input Type: Standard Gate Charge: 63nC Td (on/off) @ 25°C: 41ns/130ns Test Condition: 400V, 40A, 7.5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	In Stock18,216
APT100GN120B2G Microsemi	Transistors - IGBTs - Single IGBT 1200V 245A 960W TMAX Manufacturer: Microsemi Corporation Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 245A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Power - Max: 960W Switching Energy: 11mJ (on), 9.5mJ (off) Input Type: Standard Gate Charge: 540nC Td (on/off) @ 25°C: 50ns/615ns Test Condition: 800V, 100A, 1Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	In Stock22
APT100GN60B2G Microsemi	Transistors - IGBTs - Single IGBT 600V 229A 625W TMAX Manufacturer: Microsemi Corporation Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 229A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A Power - Max: 625W Switching Energy: 4.7mJ (on), 2.675mJ (off) Input Type: Standard Gate Charge: 600nC Td (on/off) @ 25°C: 31ns/310ns Test Condition: 400V, 100A, 1Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	In Stock42
APT100GN60LDQ4G Microsemi	Transistors - IGBTs - Single IGBT 600V 229A 625W TO264 Manufacturer: Microsemi Corporation Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 229A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A Power - Max: 625W Switching Energy: 4.75mJ (on), 2.675mJ (off) Input Type: Standard Gate Charge: 600nC Td (on/off) @ 25°C: 31ns/310ns Test Condition: 400V, 100A, 1Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 [L]	In Stock7,902
APT100GT60B2RG Microsemi	Transistors - IGBTs - Single IGBT 600V 148A 500W SOT247 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 148A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A Power - Max: 500W Switching Energy: 3.25mJ (on), 3.125mJ (off) Input Type: Standard Gate Charge: 460nC Td (on/off) @ 25°C: 40ns/320ns Test Condition: 400V, 100A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	In Stock4,500
APT102GA60B2 Microsemi	Transistors - IGBTs - Single IGBT 600V 183A 780W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 183A Current - Collector Pulsed (Icm): 307A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A Power - Max: 780W Switching Energy: 1.354mJ (on), 1.614mJ (off) Input Type: Standard Gate Charge: 294nC Td (on/off) @ 25°C: 28ns/212ns Test Condition: 400V, 62A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	In Stock305
APT102GA60L Microsemi	Transistors - IGBTs - Single IGBT 600V 183A 780W TO264 Manufacturer: Microsemi Corporation Series: - IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 183A Current - Collector Pulsed (Icm): 307A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A Power - Max: 780W Switching Energy: 1.354mJ (on), 1.614mJ (off) Input Type: Standard Gate Charge: 294nC Td (on/off) @ 25°C: 28ns/212ns Test Condition: 400V, 62A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 [L]	In Stock20
APT11GF120BRDQ1G Microsemi	Transistors - IGBTs - Single IGBT 1200V 25A 156W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 25A Current - Collector Pulsed (Icm): 24A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A Power - Max: 156W Switching Energy: 300µJ (on), 285µJ (off) Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25°C: 7ns/100ns Test Condition: 800V, 8A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock3,582
APT11GF120KRG Microsemi	Transistors - IGBTs - Single IGBT 1200V 25A 156W TO220 Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 25A Current - Collector Pulsed (Icm): 44A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A Power - Max: 156W Switching Energy: 300µJ (on), 285µJ (off) Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25°C: 7ns/100ns Test Condition: 800V, 8A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K]	In Stock6,408
APT11GP60BDQBG Microsemi	Transistors - IGBTs - Single IGBT 600V 41A 187W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 41A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 11A Power - Max: 187W Switching Energy: 46µJ (on), 90µJ (off) Input Type: Standard Gate Charge: 40nC Td (on/off) @ 25°C: 7ns/29ns Test Condition: 400V, 11A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock3,564
APT13GP120BDQ1G Microsemi	Transistors - IGBTs - Single IGBT 1200V 41A 250W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 41A Current - Collector Pulsed (Icm): 50A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A Power - Max: 250W Switching Energy: 115µJ (on), 165µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 9ns/28ns Test Condition: 600V, 13A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock7,732
APT13GP120BG Microsemi	Transistors - IGBTs - Single IGBT 1200V 41A 250W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 41A Current - Collector Pulsed (Icm): 50A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A Power - Max: 250W Switching Energy: 115µJ (on), 165µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 9ns/28ns Test Condition: 600V, 13A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock1,020
APT13GP120KG Microsemi	Transistors - IGBTs - Single IGBT 1200V 41A 250W TO220 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 41A Current - Collector Pulsed (Icm): 50A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A Power - Max: 250W Switching Energy: 114µJ (on), 165µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 9ns/28ns Test Condition: 600V, 13A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K]	In Stock5,418
APT150GN60B2G Microsemi	Transistors - IGBTs - Single IGBT 600V 220A 536W SOT227 Manufacturer: Microsemi Corporation Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 220A Current - Collector Pulsed (Icm): 450A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A Power - Max: 536W Switching Energy: 8.81mJ (on), 4.295mJ (off) Input Type: Standard Gate Charge: 970nC Td (on/off) @ 25°C: 44ns/430ns Test Condition: 400V, 150A, 1Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	In Stock860
APT150GN60LDQ4G Microsemi	Transistors - IGBTs - Single IGBT 600V 220A 536W TO-264L Manufacturer: Microsemi Corporation Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 220A Current - Collector Pulsed (Icm): 450A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A Power - Max: 536W Switching Energy: 8.81mJ (on), 4.295mJ (off) Input Type: Standard Gate Charge: 970nC Td (on/off) @ 25°C: 44ns/430ns Test Condition: 400V, 150A, 1Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 [L]	In Stock8,784
APT15GN120BDQ1G Microsemi	Transistors - IGBTs - Single IGBT 1200V 45A 195W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Power - Max: 195W Switching Energy: 410µJ (on), 950µJ (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: 10ns/150ns Test Condition: 800V, 15A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock16
APT15GN120KG Microsemi	Transistors - IGBTs - Single IGBT 1200V 45A 195W TO220 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Power - Max: 195W Switching Energy: 410µJ (on), 950µJ (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: 10ns/150ns Test Condition: 800V, 15A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K]	In Stock5,940
APT15GP60BDLG Microsemi	Transistors - IGBTs - Single IGBT 600V 56A 250W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 56A Current - Collector Pulsed (Icm): 65A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A Power - Max: 250W Switching Energy: 130µJ (on), 121µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 8ns/29ns Test Condition: 400V, 15A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock3,420
APT15GP60BDQ1G Microsemi	Transistors - IGBTs - Single IGBT 600V 56A 250W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 56A Current - Collector Pulsed (Icm): 65A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A Power - Max: 250W Switching Energy: 130µJ (on), 120µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 8ns/29ns Test Condition: 400V, 15A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock6,120
APT15GP60BG Microsemi	Transistors - IGBTs - Single IGBT 600V 56A 250W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 56A Current - Collector Pulsed (Icm): 65A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A Power - Max: 250W Switching Energy: 130µJ (on), 121µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 8ns/29ns Test Condition: 400V, 15A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock8,388
APT15GP60KG Microsemi	Transistors - IGBTs - Single IGBT 600V 56A 250W TO220 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 56A Current - Collector Pulsed (Icm): 65A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A Power - Max: 250W Switching Energy: 130µJ (on), 121µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 8ns/29ns Test Condition: 400V, 15A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K]	In Stock4,140
APT15GP90BDQ1G Microsemi	Transistors - IGBTs - Single IGBT 900V 43A 250W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 43A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A Power - Max: 250W Switching Energy: 200µJ (off) Input Type: Standard Gate Charge: 60nC Td (on/off) @ 25°C: 9ns/33ns Test Condition: 600V, 15A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock3,798
APT15GP90BG Microsemi	Transistors - IGBTs - Single IGBT 900V 43A 250W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 43A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A Power - Max: 250W Switching Energy: 200µJ (off) Input Type: Standard Gate Charge: 60nC Td (on/off) @ 25°C: 9ns/33ns Test Condition: 600V, 15A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock2,088
APT15GP90KG Microsemi	Transistors - IGBTs - Single IGBT 900V 43A 250W TO220 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 43A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A Power - Max: 250W Switching Energy: 200µJ (off) Input Type: Standard Gate Charge: 60nC Td (on/off) @ 25°C: 9ns/33ns Test Condition: 600V, 15A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K]	In Stock6,282
APT15GT120BRDQ1G Microsemi	Transistors - IGBTs - Single IGBT 1200V 36A 250W TO247 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 36A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A Power - Max: 250W Switching Energy: 585µJ (on), 260µJ (off) Input Type: Standard Gate Charge: 105nC Td (on/off) @ 25°C: 10ns/85ns Test Condition: 800V, 15A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock2,772
APT15GT120BRG Microsemi	Transistors - IGBTs - Single IGBT 1200V 36A 250W TO247 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 36A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A Power - Max: 250W Switching Energy: 585µJ (on), 260µJ (off) Input Type: Standard Gate Charge: 105nC Td (on/off) @ 25°C: 10ns/85ns Test Condition: 800V, 15A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock4,086
APT15GT60BRDQ1G Microsemi	Transistors - IGBTs - Single IGBT 600V 42A 184W TO247 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 42A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: 184W Switching Energy: 150µJ (on), 215µJ (off) Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25°C: 6ns/105ns Test Condition: 400V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock6,966

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