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APT30GP60B2DLG

APT30GP60B2DLG

For Reference Only

Part Number APT30GP60B2DLG
PNEDA Part # APT30GP60B2DLG
Description IGBT 600V 100A 463W TMAX
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 8,604
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT30GP60B2DLG Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT30GP60B2DLG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT30GP60B2DLG Specifications

ManufacturerMicrosemi Corporation
Series-
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)100A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 30A
Power - Max463W
Switching Energy260µJ (on), 250µJ (off)
Input TypeStandard
Gate Charge90nC
Td (on/off) @ 25°C13ns/55ns
Test Condition400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageT-MAX™

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 40A

Power - Max

280W

Switching Energy

1mJ (off)

Input Type

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Gate Charge

190nC

Td (on/off) @ 25°C

50ns/70ns

Test Condition

480V, 40A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

35ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264AA(IXSK)

Manufacturer

IXYS

Series

-

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1400V

Current - Collector (Ic) (Max)

70A

Current - Collector Pulsed (Icm)

140A

Vce(on) (Max) @ Vge, Ic

4V @ 15V, 35A

Power - Max

300W

Switching Energy

4mJ (off)

Input Type

Standard

Gate Charge

120nC

Td (on/off) @ 25°C

40ns/150ns

Test Condition

960V, 35A, 3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXSH)

IXSK80N60B

IXYS

Manufacturer

IXYS

Series

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IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

160A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 80A

Power - Max

500W

Switching Energy

4.2mJ (off)

Input Type

Standard

Gate Charge

240nC

Td (on/off) @ 25°C

60ns/140ns

Test Condition

480V, 80A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264AA(IXSK)

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

13A

Current - Collector Pulsed (Icm)

26A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 5A

Power - Max

90W

Switching Energy

110µJ (on), 135µJ (off)

Input Type

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Gate Charge

18.2nC

Td (on/off) @ 25°C

25ns/215ns

Test Condition

400V, 5A, 100Ohm, 15V

Reverse Recovery Time (trr)

70ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

APT25GR120BSCD10

Microsemi

Manufacturer

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Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 25A

Power - Max

521W

Switching Energy

434µJ (on), 466µJ (off)

Input Type

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Gate Charge

203nC

Td (on/off) @ 25°C

16ns/122ns

Test Condition

600V, 25A, 4.3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

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