Transistors

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Records 64,903

Page 1867/2164

Part Number	Description	In Stock
STP28N60DM2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 21A Manufacturer: STMicroelectronics Series: MDmesh™ DM2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V FET Feature: - Power Dissipation (Max): 170W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock20,820
STP28N60M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 24A TO-220 Manufacturer: STMicroelectronics Series: MDmesh™ II Plus FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 100V FET Feature: - Power Dissipation (Max): 170W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock17,928
STP28N65M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 20A TO220 Manufacturer: STMicroelectronics Series: MDmesh™ M2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 100V FET Feature: - Power Dissipation (Max): 170W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock118,086
STP28NM50N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 21A TO-220 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 158mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 25V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock15,060
STP28NM60ND STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 23A TO220 Manufacturer: STMicroelectronics Series: FDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 100V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock8,592
STP2N105K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1050V 1.5A TO-220AB Manufacturer: STMicroelectronics Series: MDmesh™ K5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1050V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 100V FET Feature: - Power Dissipation (Max): 60W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock6,588
STP2N62K3 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 620V 2.2A TO220 Manufacturer: STMicroelectronics Series: SuperMESH3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 50V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock17,766
STP2N80K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 2A TO220 Manufacturer: STMicroelectronics Series: SuperMESH5™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 100V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock7,272
STP2N95K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 950V 2A TO220 Manufacturer: STMicroelectronics Series: SuperMESH5™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 100V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock8,916
STP2NK100Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 1.85A TO-220 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.5Ohm @ 900mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 499pF @ 25V FET Feature: - Power Dissipation (Max): 70W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock164,238
STP2NK60Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 1.4A TO-220 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8Ohm @ 700mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock6,948
STP2NK90Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 2.1A TO-220 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1.05A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V FET Feature: - Power Dissipation (Max): 70W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock26,568
STP300NH02L STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 24V 120A TO-220 Manufacturer: STMicroelectronics Series: STripFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.2mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 109.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7055pF @ 15V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock6,264
STP30N10F7 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 32A TO220AB Manufacturer: STMicroelectronics Series: STripFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 50V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock19,026
STP30N20 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 30A TO-220 Manufacturer: STMicroelectronics Series: STripFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 75mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 1597pF @ 25V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock7,776
STP30N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 22A TO220 Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 100V FET Feature: - Power Dissipation (Max): 140W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock41,580
STP30NF10 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 35A TO-220 Manufacturer: STMicroelectronics Series: STripFET™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V FET Feature: - Power Dissipation (Max): 115W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock22,884
STP30NF20 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 30A TO-220 Manufacturer: STMicroelectronics Series: STripFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1597pF @ 25V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock14,460
STP30NM30N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 30A TO-220 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V FET Feature: - Power Dissipation (Max): 160W (Tc) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock8,712
STP30NM50N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 27A TO-220 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 115mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 50V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock5,328
STP30NM60N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 25A TO-220 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 50V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock3,436
STP30NM60ND STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 25A TO-220 Manufacturer: STMicroelectronics Series: FDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 50V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock3,582
STP310N10F7 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N CH 100V 180A TO-220 Manufacturer: STMicroelectronics Series: DeepGATE™, STripFET™ VII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.7mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V FET Feature: - Power Dissipation (Max): 315W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock8,568
STP315N10F7 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 180A TO-220AB Manufacturer: STMicroelectronics Series: Automotive, AEC-Q101, DeepGATE™, STripFET™ VII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.7mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V FET Feature: - Power Dissipation (Max): 315W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock16,476
STP31N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 22A TO-220 Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 100V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock2,862
STP32N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 24A TO-220 Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 119mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 100V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock8,592
STP32NM50N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N CH 500V 22A TO-220 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1973pF @ 50V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock7,830
STP33N60DM2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 24A Manufacturer: STMicroelectronics Series: MDmesh™ DM2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 100V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock13,752
STP33N60M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 26A TO220 Manufacturer: STMicroelectronics Series: MDmesh™ II Plus FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45.5nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1781pF @ 100V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock21,264
STP33N60M6 STMicroelectronics	Transistors - FETs, MOSFETs - Single NCHANNEL 600 V 105 MOHM TYP. 26 Manufacturer: STMicroelectronics Series: MDmesh™ M6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.4nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1515pF @ 100V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock6,948

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