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STP30N10F7

STP30N10F7

For Reference Only

Part Number STP30N10F7
PNEDA Part # STP30N10F7
Description MOSFET N-CH 100V 32A TO220AB
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 19,026
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP30N10F7 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP30N10F7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP30N10F7, STP30N10F7 Datasheet (Total Pages: 13, Size: 1,044.37 KB)
PDFSTP30N10F7 Datasheet Cover
STP30N10F7 Datasheet Page 2 STP30N10F7 Datasheet Page 3 STP30N10F7 Datasheet Page 4 STP30N10F7 Datasheet Page 5 STP30N10F7 Datasheet Page 6 STP30N10F7 Datasheet Page 7 STP30N10F7 Datasheet Page 8 STP30N10F7 Datasheet Page 9 STP30N10F7 Datasheet Page 10 STP30N10F7 Datasheet Page 11

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STP30N10F7 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs24mOhm @ 16A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1270pF @ 50V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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