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STP33N60M6

STP33N60M6

For Reference Only

Part Number STP33N60M6
PNEDA Part # STP33N60M6
Description NCHANNEL 600 V 105 MOHM TYP. 26
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,948
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP33N60M6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP33N60M6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP33N60M6, STP33N60M6 Datasheet (Total Pages: 13, Size: 252.44 KB)
PDFSTP33N60M6 Datasheet Cover
STP33N60M6 Datasheet Page 2 STP33N60M6 Datasheet Page 3 STP33N60M6 Datasheet Page 4 STP33N60M6 Datasheet Page 5 STP33N60M6 Datasheet Page 6 STP33N60M6 Datasheet Page 7 STP33N60M6 Datasheet Page 8 STP33N60M6 Datasheet Page 9 STP33N60M6 Datasheet Page 10 STP33N60M6 Datasheet Page 11

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STP33N60M6 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M6
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs125mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33.4nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1515pF @ 100V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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