STP30N65M5
For Reference Only
| Part Number | STP30N65M5 |
| PNEDA Part # | STP30N65M5 |
| Description | MOSFET N-CH 650V 22A TO220 |
| Manufacturer | STMicroelectronics |
| Unit Price | Request a Quote |
| In Stock | 41,580 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
STP30N65M5 Resources
| Brand | STMicroelectronics |
| ECAD Module |
|
| Mfr. Part Number | STP30N65M5 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- STP30N65M5 Datasheet
- where to find STP30N65M5
- STMicroelectronics
- STMicroelectronics STP30N65M5
- STP30N65M5 PDF Datasheet
- STP30N65M5 Stock
- STP30N65M5 Pinout
- Datasheet STP30N65M5
- STP30N65M5 Supplier
- STMicroelectronics Distributor
- STP30N65M5 Price
- STP30N65M5 Distributor
STP30N65M5 Specifications
| Manufacturer | STMicroelectronics |
| Series | MDmesh™ V |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 139mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 2880pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
The Products You May Be Interested In
|
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 170A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 13mOhm @ 85A, 10V Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 434nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 27000pF @ 25V FET Feature - Power Dissipation (Max) 1170W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |
Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 770mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 495mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.54nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 80pF @ 10V FET Feature - Power Dissipation (Max) 430mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package X2-DFN1006-3 Package / Case 3-XFDFN |
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 23A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 72mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 1704pF @ 25V FET Feature - Power Dissipation (Max) 98W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Diodes Incorporated Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 18.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |
