Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STP30N65M5

STP30N65M5

For Reference Only

Part Number STP30N65M5
PNEDA Part # STP30N65M5
Description MOSFET N-CH 650V 22A TO220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 41,580
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 18 - Apr 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP30N65M5 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP30N65M5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP30N65M5, STP30N65M5 Datasheet (Total Pages: 22, Size: 1,276.15 KB)
PDFSTF30N65M5 Datasheet Cover
STF30N65M5 Datasheet Page 2 STF30N65M5 Datasheet Page 3 STF30N65M5 Datasheet Page 4 STF30N65M5 Datasheet Page 5 STF30N65M5 Datasheet Page 6 STF30N65M5 Datasheet Page 7 STF30N65M5 Datasheet Page 8 STF30N65M5 Datasheet Page 9 STF30N65M5 Datasheet Page 10 STF30N65M5 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STP30N65M5 Datasheet
  • where to find STP30N65M5
  • STMicroelectronics

  • STMicroelectronics STP30N65M5
  • STP30N65M5 PDF Datasheet
  • STP30N65M5 Stock

  • STP30N65M5 Pinout
  • Datasheet STP30N65M5
  • STP30N65M5 Supplier

  • STMicroelectronics Distributor
  • STP30N65M5 Price
  • STP30N65M5 Distributor

STP30N65M5 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ V
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs139mOhm @ 11A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs64nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2880pF @ 100V
FET Feature-
Power Dissipation (Max)140W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

SPD09P06PL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

9.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

250mOhm @ 6.8A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

450pF @ 25V

FET Feature

-

Power Dissipation (Max)

42W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IPB80N06S2L09ATMA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.2mOhm @ 52A, 10V

Vgs(th) (Max) @ Id

2V @ 125µA

Gate Charge (Qg) (Max) @ Vgs

105nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2620pF @ 25V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

RJK5030DPD-00#J2

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.6Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

550pF @ 25V

FET Feature

-

Power Dissipation (Max)

41.7W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

MP-3A

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRL3402

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

85A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 7V

Rds On (Max) @ Id, Vgs

8mOhm @ 51A, 7V

Vgs(th) (Max) @ Id

700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

78nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

3300pF @ 15V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

72mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

49nC @ 10V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

1704pF @ 25V

FET Feature

-

Power Dissipation (Max)

98W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

CJS-1201TB1

CJS-1201TB1

Nidec Copal Electronics

SWITCH SLIDE SPDT 100MA 6V

RB751V40T1G

RB751V40T1G

ON Semiconductor

DIODE SCHOTTKY 30V 30MA SOD323

MMBD7000-7-F

MMBD7000-7-F

Diodes Incorporated

DIODE ARRAY GP 75V 300MA SOT23-3

TPSD227K006R0100

TPSD227K006R0100

CAP TANT 220UF 10% 6.3V 2917

LTM4608AMPY#PBF

LTM4608AMPY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5V 8A

S-8254AAFFT-TB-G

S-8254AAFFT-TB-G

ABLIC

IC LI-ION BATT PROTECT 16-TSSOP

50ZL560MEFC12.5X25

50ZL560MEFC12.5X25

Rubycon

CAP ALUM 560UF 20% 50V RADIAL

REF02CSZ

REF02CSZ

Analog Devices

IC VREF SERIES 5V 8SOIC

YC324-JK-072KL

YC324-JK-072KL

Yageo

RES ARRAY 4 RES 2K OHM 2012

CS5173EDR8G

CS5173EDR8G

ON Semiconductor

IC REG MULT CONFG ADJ 1.5A 8SOIC

M48Z128Y-85PM1

M48Z128Y-85PM1

STMicroelectronics

IC NVSRAM 1M PARALLEL 32PMDIP

MMBTA42LT3G

MMBTA42LT3G

ON Semiconductor

TRANS NPN 300V 0.5A SOT-23