Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Records 64,903

Page 1865/2164

Part Number	Description	In Stock
STP200NF04 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A TO-220 Manufacturer: STMicroelectronics Series: STripFET™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V FET Feature: - Power Dissipation (Max): 310W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock20,358
STP200NF04L STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A TO-220 Manufacturer: STMicroelectronics Series: STripFET™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock4,014
STP20N20 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 18A TO-220 Manufacturer: STMicroelectronics Series: STripFET™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V FET Feature: - Power Dissipation (Max): 90W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock4,932
STP20N60M2-EP STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 600V 13A TO220 Manufacturer: STMicroelectronics Series: MDmesh™ M2-EP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 110W (Tc) Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock5,382
STP20N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 18A TO-220 Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 100V FET Feature: - Power Dissipation (Max): 130W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock4,950
STP20N90K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single N-CHANNEL 900 V, 0.24 OHM TYP., Manufacturer: STMicroelectronics Series: MDmesh™ K5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock6,138
STP20N95K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 950V 17.5A TO-220 Manufacturer: STMicroelectronics Series: SuperMESH5™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock18,858
STP20NE06L STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 20A TO-220 Manufacturer: STMicroelectronics Series: STripFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V FET Feature: - Power Dissipation (Max): 70W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock6,102
STP20NF06 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 20A TO-220 Manufacturer: STMicroelectronics Series: STripFET™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V FET Feature: - Power Dissipation (Max): 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock4,806
STP20NF06L STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 20A TO-220 Manufacturer: STMicroelectronics Series: STripFET™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Vgs (Max): ±18V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V FET Feature: - Power Dissipation (Max): 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock7,884
STP20NF20 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 18A TO-220 Manufacturer: STMicroelectronics Series: STripFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V FET Feature: - Power Dissipation (Max): 110W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock22,440
STP20NK50Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 17A TO-220 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock17,592
STP20NM50 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 20A TO-220 Manufacturer: STMicroelectronics Series: MDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V FET Feature: - Power Dissipation (Max): 192W (Tc) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock5,004
STP20NM50FD STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 20A TO-220 Manufacturer: STMicroelectronics Series: FDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V FET Feature: - Power Dissipation (Max): 192W (Tc) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock4,536
STP20NM50FP STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 550V 20A TO-220FP Manufacturer: STMicroelectronics Series: MDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock6,714
STP20NM60 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO-220 Manufacturer: STMicroelectronics Series: MDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V FET Feature: - Power Dissipation (Max): 192W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock18,258
STP20NM60A STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 20A TO-220 Manufacturer: STMicroelectronics Series: MDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V FET Feature: - Power Dissipation (Max): 192W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock2,808
STP20NM60FD STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO-220 Manufacturer: STMicroelectronics Series: FDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V FET Feature: - Power Dissipation (Max): 192W (Tc) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock8,694
STP20NM60FP STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO220FP Manufacturer: STMicroelectronics Series: MDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock2,862
STP20NM65N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 15A TO-220 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 270mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 50V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock6,678
STP210N75F6 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 120A TO-220AB Manufacturer: STMicroelectronics Series: DeepGATE™, STripFET™ VI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 171nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11800pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock7,830
STP21N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 17A TO-220 Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 100V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock34,074
STP21N90K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 18.5A TO-220 Manufacturer: STMicroelectronics Series: SuperMESH5™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1645pF @ 100V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock17,172
STP21NM50N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 18A TO-220 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V FET Feature: - Power Dissipation (Max): 140W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock8,154
STP21NM60N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 17A TO-220 Manufacturer: STMicroelectronics Series: MDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 50V FET Feature: - Power Dissipation (Max): 140W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock3,618
STP21NM60ND STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 17A TO-220 Manufacturer: STMicroelectronics Series: FDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V FET Feature: - Power Dissipation (Max): 140W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock7,362
STP220N6F7 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO-220 Manufacturer: STMicroelectronics Series: STripFET™ F7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V FET Feature: - Power Dissipation (Max): 237W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock8,442
STP22NF03L STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 22A TO-220 Manufacturer: STMicroelectronics Series: STripFET™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock4,788
STP22NM60N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 16A TO-220 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 50V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock8,928
STP22NS25Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 22A TO-220 Manufacturer: STMicroelectronics Series: MESH OVERLAY™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V FET Feature: - Power Dissipation (Max): 135W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock8,010

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