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STP30NM60N

STP30NM60N

For Reference Only

Part Number STP30NM60N
PNEDA Part # STP30NM60N
Description MOSFET N-CH 600V 25A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,436
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP30NM60N Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP30NM60N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP30NM60N, STP30NM60N Datasheet (Total Pages: 18, Size: 771 KB)
PDFSTI30NM60N Datasheet Cover
STI30NM60N Datasheet Page 2 STI30NM60N Datasheet Page 3 STI30NM60N Datasheet Page 4 STI30NM60N Datasheet Page 5 STI30NM60N Datasheet Page 6 STI30NM60N Datasheet Page 7 STI30NM60N Datasheet Page 8 STI30NM60N Datasheet Page 9 STI30NM60N Datasheet Page 10 STI30NM60N Datasheet Page 11

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STP30NM60N Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs130mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs91nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 50V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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