Transistors

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Records 64,903

Page 1870/2164

Part Number	Description	In Stock
STP4NB50 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 3.8A TO-220 Manufacturer: STMicroelectronics Series: PowerMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V FET Feature: - Power Dissipation (Max): 80W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock3,420
STP4NB80 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 4A TO-220 Manufacturer: STMicroelectronics Series: PowerMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V FET Feature: - Power Dissipation (Max): 100W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock2,448
STP4NK50Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 3A TO-220 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock8,856
STP4NK50ZD STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 3A TO-220 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock3,580
STP4NK50ZFP STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 3A TO-220FP Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V FET Feature: - Power Dissipation (Max): 20W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock3,654
STP4NK60Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 4A TO-220 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V FET Feature: - Power Dissipation (Max): 70W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock12,312
STP4NK60ZFP STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 4A TO-220FP Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V FET Feature: - Power Dissipation (Max): 25W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock4,428
STP4NK80Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 3A TO-220 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 25V FET Feature: - Power Dissipation (Max): 80W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock15,228
STP4NK80ZFP STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 3A TO-220FP Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 25V FET Feature: - Power Dissipation (Max): 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock6,480
STP50NE08 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 50A TO-220 Manufacturer: STMicroelectronics Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock3,400
STP50NE10 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 50A TO-220 Manufacturer: STMicroelectronics Series: STripFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 166nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V FET Feature: - Power Dissipation (Max): 180W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock7,038
STP50NF25 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 45A TO-220 Manufacturer: STMicroelectronics Series: STripFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68.2nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 25V FET Feature: - Power Dissipation (Max): 160W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock33,342
STP52N25M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 28A TO220 Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 50V FET Feature: - Power Dissipation (Max): 110W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock16,968
STP52P3LLH6 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 52A TO220 Manufacturer: STMicroelectronics Series: STripFET™ H6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 70W (Tc) Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock3,672
STP55NF06 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 50A TO-220 Manufacturer: STMicroelectronics Series: STripFET™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 27.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V FET Feature: - Power Dissipation (Max): 110W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock14,610
STP55NF06FP STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 50A TO220FP Manufacturer: STMicroelectronics Series: STripFET™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 27.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock16,428
STP55NF06L STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 55A TO-220 Manufacturer: STMicroelectronics Series: STripFET™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 5V Rds On (Max) @ Id, Vgs: 18mOhm @ 27.5A, 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V FET Feature: - Power Dissipation (Max): 95W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock21,924
STP57N65M5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 42A TO-220 Manufacturer: STMicroelectronics Series: MDmesh™ V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 100V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock18,216
STP5N105K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1050V 3A TO-220AB Manufacturer: STMicroelectronics Series: MDmesh™ K5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1050V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 100V FET Feature: - Power Dissipation (Max): 85W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock21,696
STP5N120 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 4.4A TO-220 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2.3A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V FET Feature: - Power Dissipation (Max): 160W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock2,340
STP5N52K3 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 525V 4.4A TO-220 Manufacturer: STMicroelectronics Series: SuperMESH3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 100V FET Feature: - Power Dissipation (Max): 70W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock3,456
STP5N60M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 3.7A TO220 Manufacturer: STMicroelectronics Series: MDmesh™ II Plus FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 100V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock17,364
STP5N62K3 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 620V 4.2A TO220AB Manufacturer: STMicroelectronics Series: SuperMESH3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 50V FET Feature: - Power Dissipation (Max): 70W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock5,868
STP5N80K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single N-CHANNEL 800 V, 1.50 OHM TYP., Manufacturer: STMicroelectronics Series: MDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 100V FET Feature: - Power Dissipation (Max): 60W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock116,070
STP5N95K3 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 950V 4A TO-220AB Manufacturer: STMicroelectronics Series: SuperMESH3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V FET Feature: - Power Dissipation (Max): 90W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock8,442
STP5N95K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 950V 3.5A TO220 Manufacturer: STMicroelectronics Series: SuperMESH5™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 100V FET Feature: - Power Dissipation (Max): 70W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock3,744
STP5NB40 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 4.7A TO-220 Manufacturer: STMicroelectronics Series: PowerMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.3A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 25V FET Feature: - Power Dissipation (Max): 80W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock2,628
STP5NB60 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 5A TO-220 Manufacturer: STMicroelectronics Series: PowerMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 884pF @ 25V FET Feature: - Power Dissipation (Max): 100W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock7,236
STP5NK100Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1KV 3.5A TO-220 Manufacturer: STMicroelectronics Series: SuperMESH3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.7Ohm @ 1.75A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1154pF @ 25V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock57,354
STP5NK40Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 3A TO-220 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 25V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock5,454

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