Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STP30NF10

STP30NF10

For Reference Only

Part Number STP30NF10
PNEDA Part # STP30NF10
Description MOSFET N-CH 100V 35A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 22,884
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 18 - Apr 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP30NF10 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP30NF10
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP30NF10, STP30NF10 Datasheet (Total Pages: 16, Size: 502.06 KB)
PDFSTB30NF10T4 Datasheet Cover
STB30NF10T4 Datasheet Page 2 STB30NF10T4 Datasheet Page 3 STB30NF10T4 Datasheet Page 4 STB30NF10T4 Datasheet Page 5 STB30NF10T4 Datasheet Page 6 STB30NF10T4 Datasheet Page 7 STB30NF10T4 Datasheet Page 8 STB30NF10T4 Datasheet Page 9 STB30NF10T4 Datasheet Page 10 STB30NF10T4 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STP30NF10 Datasheet
  • where to find STP30NF10
  • STMicroelectronics

  • STMicroelectronics STP30NF10
  • STP30NF10 PDF Datasheet
  • STP30NF10 Stock

  • STP30NF10 Pinout
  • Datasheet STP30NF10
  • STP30NF10 Supplier

  • STMicroelectronics Distributor
  • STP30NF10 Price
  • STP30NF10 Distributor

STP30NF10 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs45mOhm @ 15A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1180pF @ 25V
FET Feature-
Power Dissipation (Max)115W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

4.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

123nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

17130pF @ 25V

FET Feature

-

Power Dissipation (Max)

349W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

DMTH4005SK3Q-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

95A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

49.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3062pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252 (DPAK)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

DMP6180SK3Q-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

110mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

984.7pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.7W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SISS10DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.65mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

3750pF @ 20V

FET Feature

-

Power Dissipation (Max)

57W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8S (3.3x3.3)

Package / Case

PowerPAK® 1212-8S

IXFN130N30

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

130A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

22mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

380nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

14500pF @ 25V

FET Feature

-

Power Dissipation (Max)

700W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC

Recently Sold

PS2801C-4-A

PS2801C-4-A

CEL

OPTOISO 2.5KV 4CH TRANS 16SSOP

S25FL208K0RMFI041

S25FL208K0RMFI041

Cypress Semiconductor

IC FLASH 8M SPI 76MHZ 8SOIC

64-2096PBF

64-2096PBF

Infineon Technologies

MOSFET N-CH 75V 160A D2PAK-7

IRFR5305TRPBF

IRFR5305TRPBF

Infineon Technologies

MOSFET P-CH 55V 31A DPAK

PIC16F876-20I/SO

PIC16F876-20I/SO

Microchip Technology

IC MCU 8BIT 14KB FLASH 28SOIC

SMBJ6.5CA

SMBJ6.5CA

Littelfuse

TVS DIODE 6.5V 11.2V DO214AA

OP2177ARMZ-REEL

OP2177ARMZ-REEL

Analog Devices

IC OPAMP GP 2 CIRCUIT 8MSOP

MLX90615SSG-DAG-000-TU

MLX90615SSG-DAG-000-TU

Melexis Technologies NV

SENSOR DGTL -40C-85C TO46-4

BAT54A-7-F

BAT54A-7-F

Diodes Incorporated

DIODE ARRAY SCHOTTKY 30V SOT23-3

74HC573D

74HC573D

Toshiba Semiconductor and Storage

IC LATCH OCTAL D 3ST 20SOIC

S34ML02G104TFI010

S34ML02G104TFI010

SkyHigh Memory Limited

IC FLASH 2G PARALLEL 48TSOP I

NC7SZ125P5X

NC7SZ125P5X

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-5