Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 1755/2164

Part Number	Description	In Stock
SIB406EDK-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 6A SC-75-6 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V FET Feature: - Power Dissipation (Max): 1.95W (Ta), 10W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock7,380
SIB408DK-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 7A PPAK SC75-6L Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock7,416
SIB410DK-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 9A 8SO Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock8,046
SIB411DK-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 9A SC75-6 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 66mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock5,508
SIB411DK-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 9A PPAK SC75-6L Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 66mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock6,534
SIB412DK-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 9A SC75-6 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 34mOhm @ 6.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.16nC @ 5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 10V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock4,482
SIB412DK-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 9A SC75-6 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 34mOhm @ 6.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.16nC @ 5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 10V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock7,362
SIB413DK-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 9A SC75-6 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 75mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.63nC @ 5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 357pF @ 10V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock3,870
SIB414DK-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 8V 9A PPAK SC75-6 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 26mOhm @ 7.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.03nC @ 5V Vgs (Max): ±5V Input Capacitance (Ciss) (Max) @ Vds: 732pF @ 4V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock6,282
SIB415DK-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 9A SC75-6 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 87mOhm @ 4.17A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.05nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 15V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock6,624
SIB417AEDK-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 8V 9A PWRPACK Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 32mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 5V Vgs (Max): ±5V Input Capacitance (Ciss) (Max) @ Vds: 878pF @ 4V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock8,730
SIB417DK-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 8V 9A SC75-6 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 52mOhm @ 5.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.75nC @ 5V Vgs (Max): ±5V Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 4V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock4,824
SIB417EDK-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 8V 9A SC75-6 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 58mOhm @ 5.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Vgs (Max): ±5V Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 4V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock7,236
SIB419DK-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 9A SC75-6 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 60mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.82nC @ 5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 6V FET Feature: - Power Dissipation (Max): 2.45W (Ta), 13.1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock8,766
SIB422EDK-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 9A SC-75-6 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 2.5W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock4,122
SIB433EDK-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 9A SC-75-6 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 58mOhm @ 3.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock4,338
SIB437EDKT-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 8V 9A SC-75-6 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs (Max): ±5V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® TSC75-6 Package / Case: PowerPAK® TSC-75-6	In Stock5,868
SIB441EDK-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 9A PPAK SC75-6L Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 25.5mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 6V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock154,686
SIB452DK-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 190V 1.5A SC75-6 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 190V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 50V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock311,352
SIB455EDK-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 9A SC-75-6 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 27mOhm @ 5.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock6,156
SIB456DK-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 6.3A SC75-6L Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 185mOhm @ 1.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 50V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock8,604
SIB457EDK-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 9A PPAK SC75-6L Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock114,786
SIB488DK-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 12V 9A SC75-6 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 20mOhm @ 6.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 6V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock7,632
SIB800EDK-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 1.5A SC75-6 Manufacturer: Vishay Siliconix Series: LITTLE FOOT® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 225mOhm @ 1.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V Vgs (Max): ±6V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Ta), 3.1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6L Single Package / Case: PowerPAK® SC-75-6L	In Stock5,148
SIDR140DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 25V PPAK SO-8DC Manufacturer: Vishay Siliconix Series: TrenchFET® Gen IV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 8150pF @ 10V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	In Stock7,434
SIDR390DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 30V POWERPAK SO-8D Manufacturer: Vishay Siliconix Series: TrenchFET® Gen IV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 10180pF @ 15V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	In Stock27,018
SIDR390DP-T1-RE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V POWERPAK SO-8DC Manufacturer: Vishay Siliconix Series: TrenchFET® Gen IV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 10180pF @ 15V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	In Stock3,042
SIDR392DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 30V Manufacturer: Vishay Siliconix Series: TrenchFET® Gen IV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 188nC @ 10V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 9530pF @ 15V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	In Stock2,898
SIDR402DP-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 40V PPSO-8DC Manufacturer: Vishay Siliconix Series: TrenchFET® Gen IV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	In Stock6,840
SIDR608DP-T1-RE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 45V PP SO-8 Manufacturer: Vishay Siliconix Series: TrenchFET® Gen IV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	In Stock4,284

«
‹
1
...
1752
1753
1754
1755 (current)
1756
1757
1758
...
2164
›
»

Send Message

Certifications

Transistors

Resources

Support

Social Media

Need Help?
Send Message