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SIB452DK-T1-GE3

SIB452DK-T1-GE3

For Reference Only

Part Number SIB452DK-T1-GE3
PNEDA Part # SIB452DK-T1-GE3
Description MOSFET N-CH 190V 1.5A SC75-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 311,352
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIB452DK-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIB452DK-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIB452DK-T1-GE3, SIB452DK-T1-GE3 Datasheet (Total Pages: 9, Size: 229.41 KB)
PDFSIB452DK-T1-GE3 Datasheet Cover
SIB452DK-T1-GE3 Datasheet Page 2 SIB452DK-T1-GE3 Datasheet Page 3 SIB452DK-T1-GE3 Datasheet Page 4 SIB452DK-T1-GE3 Datasheet Page 5 SIB452DK-T1-GE3 Datasheet Page 6 SIB452DK-T1-GE3 Datasheet Page 7 SIB452DK-T1-GE3 Datasheet Page 8 SIB452DK-T1-GE3 Datasheet Page 9

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SIB452DK-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)190V
Current - Continuous Drain (Id) @ 25°C1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs2.4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.5nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds135pF @ 50V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 13W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-75-6L Single
Package / CasePowerPAK® SC-75-6L

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