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SIDR390DP-T1-RE3

SIDR390DP-T1-RE3

For Reference Only

Part Number SIDR390DP-T1-RE3
PNEDA Part # SIDR390DP-T1-RE3
Description MOSFET N-CH 30V POWERPAK SO-8DC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,042
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIDR390DP-T1-RE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIDR390DP-T1-RE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIDR390DP-T1-RE3, SIDR390DP-T1-RE3 Datasheet (Total Pages: 9, Size: 211.3 KB)
PDFSIDR392DP-T1-GE3 Datasheet Cover
SIDR392DP-T1-GE3 Datasheet Page 2 SIDR392DP-T1-GE3 Datasheet Page 3 SIDR392DP-T1-GE3 Datasheet Page 4 SIDR392DP-T1-GE3 Datasheet Page 5 SIDR392DP-T1-GE3 Datasheet Page 6 SIDR392DP-T1-GE3 Datasheet Page 7 SIDR392DP-T1-GE3 Datasheet Page 8 SIDR392DP-T1-GE3 Datasheet Page 9

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SIDR390DP-T1-RE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C69.9A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs0.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs153nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds10180pF @ 15V
FET Feature-
Power Dissipation (Max)6.25W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8DC
Package / CasePowerPAK® SO-8

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