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SIDR392DP-T1-GE3

SIDR392DP-T1-GE3

For Reference Only

Part Number SIDR392DP-T1-GE3
PNEDA Part # SIDR392DP-T1-GE3
Description MOSFET N-CHAN 30V
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,898
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIDR392DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIDR392DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIDR392DP-T1-GE3, SIDR392DP-T1-GE3 Datasheet (Total Pages: 9, Size: 211.3 KB)
PDFSIDR392DP-T1-GE3 Datasheet Cover
SIDR392DP-T1-GE3 Datasheet Page 2 SIDR392DP-T1-GE3 Datasheet Page 3 SIDR392DP-T1-GE3 Datasheet Page 4 SIDR392DP-T1-GE3 Datasheet Page 5 SIDR392DP-T1-GE3 Datasheet Page 6 SIDR392DP-T1-GE3 Datasheet Page 7 SIDR392DP-T1-GE3 Datasheet Page 8 SIDR392DP-T1-GE3 Datasheet Page 9

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SIDR392DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C82A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs0.62mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs188nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds9530pF @ 15V
FET Feature-
Power Dissipation (Max)6.25W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8DC
Package / CasePowerPAK® SO-8

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