Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIDR392DP-T1-GE3

SIDR392DP-T1-GE3

For Reference Only

Part Number SIDR392DP-T1-GE3
PNEDA Part # SIDR392DP-T1-GE3
Description MOSFET N-CHAN 30V
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,898
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIDR392DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIDR392DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIDR392DP-T1-GE3, SIDR392DP-T1-GE3 Datasheet (Total Pages: 9, Size: 211.3 KB)
PDFSIDR392DP-T1-GE3 Datasheet Cover
SIDR392DP-T1-GE3 Datasheet Page 2 SIDR392DP-T1-GE3 Datasheet Page 3 SIDR392DP-T1-GE3 Datasheet Page 4 SIDR392DP-T1-GE3 Datasheet Page 5 SIDR392DP-T1-GE3 Datasheet Page 6 SIDR392DP-T1-GE3 Datasheet Page 7 SIDR392DP-T1-GE3 Datasheet Page 8 SIDR392DP-T1-GE3 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIDR392DP-T1-GE3 Datasheet
  • where to find SIDR392DP-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIDR392DP-T1-GE3
  • SIDR392DP-T1-GE3 PDF Datasheet
  • SIDR392DP-T1-GE3 Stock

  • SIDR392DP-T1-GE3 Pinout
  • Datasheet SIDR392DP-T1-GE3
  • SIDR392DP-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIDR392DP-T1-GE3 Price
  • SIDR392DP-T1-GE3 Distributor

SIDR392DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C82A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs0.62mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs188nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds9530pF @ 15V
FET Feature-
Power Dissipation (Max)6.25W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8DC
Package / CasePowerPAK® SO-8

The Products You May Be Interested In

ZVN4525GTA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

310mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

8.5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

1.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

3.65nC @ 10V

Vgs (Max)

±40V

Input Capacitance (Ciss) (Max) @ Vds

72pF @ 25V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

BUK7Y20-30B,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

39.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

11.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

688pF @ 25V

FET Feature

-

Power Dissipation (Max)

59W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

SFH154

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

75mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3370pF @ 25V

FET Feature

-

Power Dissipation (Max)

204W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

IRF7451PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

3.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

90mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

41nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

990pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

AOD403_003

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

15A (Ta), 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V, 20V

Rds On (Max) @ Id, Vgs

6.2mOhm @ 20A, 20V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

61nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

3500pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 90W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252 (DPAK)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

ATMEGA328P-AU

ATMEGA328P-AU

Microchip Technology

IC MCU 8BIT 32KB FLASH 32TQFP

S29GL256P11FFIV10

S29GL256P11FFIV10

Cypress Semiconductor

IC FLASH 256M PARALLEL 64FBGA

MMSS8050-H-TP

MMSS8050-H-TP

Micro Commercial Co

TRANS NPN 25V 1.5A SOT23

MAX3002EUP+

MAX3002EUP+

Maxim Integrated

IC TRNSLTR BIDIRECTIONAL 20TSSOP

2N6433

2N6433

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

AP1533SG-13

AP1533SG-13

Diodes Incorporated

IC REG BUCK ADJUSTABLE 1.8A 8SOP

EMC1001-AFZQ-TR

EMC1001-AFZQ-TR

Microchip Technology

SENSOR DIGITAL -25C-125C SOT6

MBRD1035CTLG

MBRD1035CTLG

ON Semiconductor

DIODE ARRAY SCHOTTKY 35V 5A DPAK

TZR1R080A001R00

TZR1R080A001R00

Murata

CAP TRIMMER 3-8PF 25V SMD

SC2596SETRT

SC2596SETRT

Semtech

IC REG LDO DDR 1OUT 8SOIC

FXMA2102UMX

FXMA2102UMX

ON Semiconductor

IC TRNSLTR BIDIRECTIONAL 8MLP

IHLP2525CZER1R0M01

IHLP2525CZER1R0M01

Vishay Dale

FIXED IND 1UH 11A 10 MOHM SMD