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SIB455EDK-T1-GE3

SIB455EDK-T1-GE3

For Reference Only

Part Number SIB455EDK-T1-GE3
PNEDA Part # SIB455EDK-T1-GE3
Description MOSFET P-CH 12V 9A SC-75-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,156
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIB455EDK-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIB455EDK-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIB455EDK-T1-GE3, SIB455EDK-T1-GE3 Datasheet (Total Pages: 7, Size: 135.33 KB)
PDFSIB455EDK-T1-GE3 Datasheet Cover
SIB455EDK-T1-GE3 Datasheet Page 2 SIB455EDK-T1-GE3 Datasheet Page 3 SIB455EDK-T1-GE3 Datasheet Page 4 SIB455EDK-T1-GE3 Datasheet Page 5 SIB455EDK-T1-GE3 Datasheet Page 6 SIB455EDK-T1-GE3 Datasheet Page 7

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SIB455EDK-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs27mOhm @ 5.6A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 8V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)2.4W (Ta), 13W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-75-6L Single
Package / CasePowerPAK® SC-75-6L

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