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SIB456DK-T1-GE3

SIB456DK-T1-GE3

For Reference Only

Part Number SIB456DK-T1-GE3
PNEDA Part # SIB456DK-T1-GE3
Description MOSFET N-CH 100V 6.3A SC75-6L
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,604
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIB456DK-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIB456DK-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIB456DK-T1-GE3, SIB456DK-T1-GE3 Datasheet (Total Pages: 9, Size: 223.12 KB)
PDFSIB456DK-T1-GE3 Datasheet Cover
SIB456DK-T1-GE3 Datasheet Page 2 SIB456DK-T1-GE3 Datasheet Page 3 SIB456DK-T1-GE3 Datasheet Page 4 SIB456DK-T1-GE3 Datasheet Page 5 SIB456DK-T1-GE3 Datasheet Page 6 SIB456DK-T1-GE3 Datasheet Page 7 SIB456DK-T1-GE3 Datasheet Page 8 SIB456DK-T1-GE3 Datasheet Page 9

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SIB456DK-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs185mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds130pF @ 50V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 13W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-75-6L Single
Package / CasePowerPAK® SC-75-6L

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