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SIB417EDK-T1-GE3

SIB417EDK-T1-GE3

For Reference Only

Part Number SIB417EDK-T1-GE3
PNEDA Part # SIB417EDK-T1-GE3
Description MOSFET P-CH 8V 9A SC75-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,236
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIB417EDK-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIB417EDK-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIB417EDK-T1-GE3, SIB417EDK-T1-GE3 Datasheet (Total Pages: 9, Size: 213.45 KB)
PDFSIB417EDK-T1-GE3 Datasheet Cover
SIB417EDK-T1-GE3 Datasheet Page 2 SIB417EDK-T1-GE3 Datasheet Page 3 SIB417EDK-T1-GE3 Datasheet Page 4 SIB417EDK-T1-GE3 Datasheet Page 5 SIB417EDK-T1-GE3 Datasheet Page 6 SIB417EDK-T1-GE3 Datasheet Page 7 SIB417EDK-T1-GE3 Datasheet Page 8 SIB417EDK-T1-GE3 Datasheet Page 9

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SIB417EDK-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs58mOhm @ 5.8A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 5V
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds565pF @ 4V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 13W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-75-6L Single
Package / CasePowerPAK® SC-75-6L

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