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SIB800EDK-T1-GE3

SIB800EDK-T1-GE3

For Reference Only

Part Number SIB800EDK-T1-GE3
PNEDA Part # SIB800EDK-T1-GE3
Description MOSFET N-CH 20V 1.5A SC75-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,148
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIB800EDK-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIB800EDK-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIB800EDK-T1-GE3, SIB800EDK-T1-GE3 Datasheet (Total Pages: 9, Size: 149.43 KB)
PDFSIB800EDK-T1-GE3 Datasheet Cover
SIB800EDK-T1-GE3 Datasheet Page 2 SIB800EDK-T1-GE3 Datasheet Page 3 SIB800EDK-T1-GE3 Datasheet Page 4 SIB800EDK-T1-GE3 Datasheet Page 5 SIB800EDK-T1-GE3 Datasheet Page 6 SIB800EDK-T1-GE3 Datasheet Page 7 SIB800EDK-T1-GE3 Datasheet Page 8 SIB800EDK-T1-GE3 Datasheet Page 9

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SIB800EDK-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesLITTLE FOOT®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs225mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.7nC @ 4.5V
Vgs (Max)±6V
Input Capacitance (Ciss) (Max) @ Vds-
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.1W (Ta), 3.1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-75-6L Single
Package / CasePowerPAK® SC-75-6L

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