Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Transistors - Bipolar (BJT) - Single (13,715)
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Records 64,903

Page 1490/2164

Part Number	Description	In Stock
IXFH16N50P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 16A TO-247 Manufacturer: IXYS Series: HiPerFET™, PolarHT™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	In Stock7,470
IXFH16N50P3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 16A TO-247 Manufacturer: IXYS Series: HiPerFET™, Polar3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1515pF @ 25V FET Feature: - Power Dissipation (Max): 330W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	In Stock5,130
IXFH16N60P3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 16A TO-247 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V FET Feature: - Power Dissipation (Max): 347W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock4,500
IXFH16N80P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 16A TO-247 Manufacturer: IXYS Series: HiPerFET™, PolarHT™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V FET Feature: - Power Dissipation (Max): 460W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	In Stock7,290
IXFH16N90Q IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 16A TO-247 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 650mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V FET Feature: - Power Dissipation (Max): 360W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	In Stock6,264
IXFH170N10P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 170A TO-247 Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V FET Feature: - Power Dissipation (Max): 715W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	In Stock4,446
IXFH170N25X3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 170A TO247 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V FET Feature: - Power Dissipation (Max): 960W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXFH) Package / Case: TO-247-3	In Stock7,668
IXFH1799 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO-247AD Manufacturer: IXYS Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock2,448
IXFH17N80Q IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 17A TO-247 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V FET Feature: - Power Dissipation (Max): 400W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	In Stock8,622
IXFH180N20X3 IXYS	Transistors - FETs, MOSFETs - Single 200V/180A ULTRA JUNCTION X3-CLAS Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V FET Feature: - Power Dissipation (Max): 780W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock2,100
IXFH1837 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO-247AD Manufacturer: IXYS Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock7,686
IXFH18N100Q3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 18A TO-247 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 660mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4890pF @ 25V FET Feature: - Power Dissipation (Max): 830W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	In Stock5,832
IXFH18N60P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 18A TO-247 Manufacturer: IXYS Series: HiPerFET™, PolarHT™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V FET Feature: - Power Dissipation (Max): 360W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	In Stock5,598
IXFH18N60X IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 18A TO-247 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 230mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V FET Feature: - Power Dissipation (Max): 320W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock3,996
IXFH18N90P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO-247 Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 25V FET Feature: - Power Dissipation (Max): 540W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	In Stock6,120
IXFH20N100P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 20A TO-247 Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V FET Feature: - Power Dissipation (Max): 660W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	In Stock5,976
IXFH20N50P3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 20A TO-247 Manufacturer: IXYS Series: HiPerFET™, Polar3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V FET Feature: - Power Dissipation (Max): 380W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	In Stock5,346
IXFH20N60 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO-247AD Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	In Stock8,406
IXFH20N60Q IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO-247 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	In Stock2,502
IXFH20N80P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 20A TO-247 Manufacturer: IXYS Series: HiPerFET™, PolarHT™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 520mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4685pF @ 25V FET Feature: - Power Dissipation (Max): 500W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	In Stock2,736
IXFH20N80Q IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 20A TO-247AD Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 420mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V FET Feature: - Power Dissipation (Max): 360W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	In Stock3,402
IXFH20N85X IXYS	Transistors - FETs, MOSFETs - Single 850V/20A ULTRA JUNCTION X-CLASS Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V FET Feature: - Power Dissipation (Max): 540W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock4,014
IXFH21N50 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 21A TO-247AD Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	In Stock8,136
IXFH21N50F IXYS-RF	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 21A TO247 Manufacturer: IXYS-RF Series: HiPerRF™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXFH) Package / Case: TO-247-3	In Stock7,758
IXFH21N50Q IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 21A TO-247 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V FET Feature: - Power Dissipation (Max): 280W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	In Stock8,658
IXFH220N06T3 IXYS	Transistors - FETs, MOSFETs - Single 60V/220A TRENCHT3 HIPERFET MOSFE Manufacturer: IXYS Series: HiperFET™, TrenchT3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V FET Feature: - Power Dissipation (Max): 440W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock5,130
IXFH220N20X3 IXYS	Transistors - FETs, MOSFETs - Single 200V/220A ULTRA JUNCTION X3-CLAS Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 204nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V FET Feature: - Power Dissipation (Max): 960W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock7,848
IXFH22N50P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 22A TO-247 Manufacturer: IXYS Series: HiPerFET™, PolarHT™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V FET Feature: - Power Dissipation (Max): 350W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	In Stock6,168
IXFH22N55 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 550V 22A TO-247AD Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	In Stock7,488
IXFH22N60P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 22A TO-247 Manufacturer: IXYS Series: HiPerFET™, PolarHT™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V FET Feature: - Power Dissipation (Max): 400W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	In Stock5,418

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