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IXFH16N80P

IXFH16N80P

For Reference Only

Part Number IXFH16N80P
PNEDA Part # IXFH16N80P
Description MOSFET N-CH 800V 16A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,290
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH16N80P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH16N80P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH16N80P, IXFH16N80P Datasheet (Total Pages: 5, Size: 201.85 KB)
PDFIXFV16N80PS Datasheet Cover
IXFV16N80PS Datasheet Page 2 IXFV16N80PS Datasheet Page 3 IXFV16N80PS Datasheet Page 4 IXFV16N80PS Datasheet Page 5

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IXFH16N80P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs71nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4600pF @ 25V
FET Feature-
Power Dissipation (Max)460W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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