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IXFH20N80P

IXFH20N80P

For Reference Only

Part Number IXFH20N80P
PNEDA Part # IXFH20N80P
Description MOSFET N-CH 800V 20A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,736
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH20N80P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH20N80P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH20N80P, IXFH20N80P Datasheet (Total Pages: 5, Size: 326.35 KB)
PDFIXFV20N80PS Datasheet Cover
IXFV20N80PS Datasheet Page 2 IXFV20N80PS Datasheet Page 3 IXFV20N80PS Datasheet Page 4 IXFV20N80PS Datasheet Page 5

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IXFH20N80P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs520mOhm @ 10A, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs86nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4685pF @ 25V
FET Feature-
Power Dissipation (Max)500W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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