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IXFH18N100Q3

IXFH18N100Q3

For Reference Only

Part Number IXFH18N100Q3
PNEDA Part # IXFH18N100Q3
Description MOSFET N-CH 1000V 18A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,832
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH18N100Q3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH18N100Q3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH18N100Q3, IXFH18N100Q3 Datasheet (Total Pages: 5, Size: 131.67 KB)
PDFIXFT18N100Q3 Datasheet Cover
IXFT18N100Q3 Datasheet Page 2 IXFT18N100Q3 Datasheet Page 3 IXFT18N100Q3 Datasheet Page 4 IXFT18N100Q3 Datasheet Page 5

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IXFH18N100Q3 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs660mOhm @ 9A, 10V
Vgs(th) (Max) @ Id6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs90nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4890pF @ 25V
FET Feature-
Power Dissipation (Max)830W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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