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IXFH21N50F

IXFH21N50F

For Reference Only

Part Number IXFH21N50F
PNEDA Part # IXFH21N50F
Description MOSFET N-CH 500V 21A TO247
Manufacturer IXYS-RF
Unit Price Request a Quote
In Stock 7,758
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH21N50F Resources

Brand IXYS-RF
ECAD Module ECAD
Mfr. Part NumberIXFH21N50F
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH21N50F, IXFH21N50F Datasheet (Total Pages: 2, Size: 107.02 KB)
PDFIXFH21N50F Datasheet Cover
IXFH21N50F Datasheet Page 2

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IXFH21N50F Specifications

ManufacturerIXYS-RF
SeriesHiPerRF™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs250mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs77nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXFH)
Package / CaseTO-247-3

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