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IXFH170N10P

IXFH170N10P

For Reference Only

Part Number IXFH170N10P
PNEDA Part # IXFH170N10P
Description MOSFET N-CH 100V 170A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,446
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 21 - Apr 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH170N10P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH170N10P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH170N10P, IXFH170N10P Datasheet (Total Pages: 5, Size: 141.04 KB)
PDFIXFK170N10P Datasheet Cover
IXFK170N10P Datasheet Page 2 IXFK170N10P Datasheet Page 3 IXFK170N10P Datasheet Page 4 IXFK170N10P Datasheet Page 5

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IXFH170N10P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs198nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6000pF @ 25V
FET Feature-
Power Dissipation (Max)715W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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