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IXFH18N60P

IXFH18N60P

For Reference Only

Part Number IXFH18N60P
PNEDA Part # IXFH18N60P
Description MOSFET N-CH 600V 18A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,598
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 21 - Apr 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH18N60P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH18N60P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH18N60P, IXFH18N60P Datasheet (Total Pages: 5, Size: 172.37 KB)
PDFIXFV18N60PS Datasheet Cover
IXFV18N60PS Datasheet Page 2 IXFV18N60PS Datasheet Page 3 IXFV18N60PS Datasheet Page 4 IXFV18N60PS Datasheet Page 5

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IXFH18N60P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2500pF @ 25V
FET Feature-
Power Dissipation (Max)360W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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