IXFH20N80Q
For Reference Only
| Part Number | IXFH20N80Q |
| PNEDA Part # | IXFH20N80Q |
| Description | MOSFET N-CH 800V 20A TO-247AD |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 3,402 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IXFH20N80Q Resources
| Brand | IXYS |
| ECAD Module |
|
| Mfr. Part Number | IXFH20N80Q |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IXFH20N80Q Datasheet
- where to find IXFH20N80Q
- IXYS
- IXYS IXFH20N80Q
- IXFH20N80Q PDF Datasheet
- IXFH20N80Q Stock
- IXFH20N80Q Pinout
- Datasheet IXFH20N80Q
- IXFH20N80Q Supplier
- IXYS Distributor
- IXFH20N80Q Price
- IXFH20N80Q Distributor
IXFH20N80Q Specifications
| Manufacturer | IXYS |
| Series | HiPerFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 200nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD (IXFH) |
| Package / Case | TO-247-3 |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6.9mOhm @ 90A, 10V Vgs(th) (Max) @ Id 4V @ 40µA Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 79W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3-11 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer IXYS Series TrenchMV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3080pF @ 25V FET Feature - Power Dissipation (Max) 230W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 380mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id 3.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 710pF @ 100V FET Feature - Power Dissipation (Max) 31W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-FP Package / Case TO-220-3 Full Pack |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.2mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 120µA Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13150pF @ 25V FET Feature - Power Dissipation (Max) 167W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3-1 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
