Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

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Part Number	Description	In Stock
IPP100N12S305AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL_100+ Manufacturer: Infineon Technologies Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock7,326
IPP100P03P3L-04 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 100A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2.1V @ 475µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs (Max): +5V, -16V Input Capacitance (Ciss) (Max) @ Vds: 9300pF @ 25V FET Feature: - Power Dissipation (Max): 200W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock5,202
IPP10N03LB G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 50A TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.9mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1639pF @ 15V FET Feature: - Power Dissipation (Max): 58W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock7,164
IPP110N20N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 88A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7100pF @ 100V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock18,552
IPP110N20NAAKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 88A TO220-3 Manufacturer: Infineon Technologies Series: OptimWatt™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7100pF @ 100V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock14,808
IPP111N15N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 83A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Rds On (Max) @ Id, Vgs: 11.1mOhm @ 83A, 10V Vgs(th) (Max) @ Id: 4V @ 160µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 75V FET Feature: - Power Dissipation (Max): 214W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock15,330
IPP114N03L G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 30A TO-220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11.4mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V FET Feature: - Power Dissipation (Max): 38W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock7,236
IPP114N12N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 120V 75A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 11.4mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4310pF @ 60V FET Feature: - Power Dissipation (Max): 136W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock8,088
IPP11N03LA Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 30A TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 15V FET Feature: - Power Dissipation (Max): 52W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock5,220
IPP120N04S302AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14300pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock11,244
IPP120N04S401AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A TO220-3-1 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V FET Feature: - Power Dissipation (Max): 188W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock8,946
IPP120N04S402AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A TO220-3-1 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10740pF @ 25V FET Feature: - Power Dissipation (Max): 158W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock6,444
IPP120N06NGAKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 75A TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 30V FET Feature: - Power Dissipation (Max): 158W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock8,784
IPP120N06S402AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 15750pF @ 25V FET Feature: - Power Dissipation (Max): 188W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock4,536
IPP120N06S402AKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A PG-TO220-3 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 15750pF @ 25V FET Feature: - Power Dissipation (Max): 188W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock5,112
IPP120N06S403AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13150pF @ 25V FET Feature: - Power Dissipation (Max): 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock8,784
IPP120N06S403AKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A PG-TO220-3 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13150pF @ 25V FET Feature: - Power Dissipation (Max): 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock7,308
IPP120N06S4H1AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 21900pF @ 25V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock6,552
IPP120N06S4H1AKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO220-3 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 21900pF @ 25V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock3,150
IPP120N08S403AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO220-3 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 223µA Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11550pF @ 25V FET Feature: - Power Dissipation (Max): 278W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock14,148
IPP120N08S404AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO220-3 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V FET Feature: - Power Dissipation (Max): 179W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock2,232
IPP120N10S403AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO220-3 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10120pF @ 25V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock7,362
IPP120N10S405AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO220-3 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 25V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock4,392
IPP120N20NFDAKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 84A TO220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 84A, 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6650pF @ 100V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock23,850
IPP120P04P404AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO220-3 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14790pF @ 25V FET Feature: - Power Dissipation (Max): 136W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock7,146
IPP120P04P4L03AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 120A TO220-3 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2.2V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 234nC @ 10V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V FET Feature: - Power Dissipation (Max): 136W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock79,350
IPP126N10N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 58A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 12.3mOhm @ 46A, 10V Vgs(th) (Max) @ Id: 3.5V @ 46µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V FET Feature: - Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock8,484
IPP12CN10LGXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 69A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 69A, 10V Vgs(th) (Max) @ Id: 2.4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 50V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock7,044
IPP12CN10N G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 67A TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12.9mOhm @ 67A, 10V Vgs(th) (Max) @ Id: 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4320pF @ 50V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock5,562
IPP12CN10NGXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 67A TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12.9mOhm @ 67A, 10V Vgs(th) (Max) @ Id: 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4320pF @ 50V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock8,082

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