Transistors

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Records 64,903

Page 1317/2164

Part Number	Description	In Stock
IPP12CNE8N G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 67A TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12.9mOhm @ 67A, 10V Vgs(th) (Max) @ Id: 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 40V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock4,338
IPP139N08N3 G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 45A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 13.9mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 3.5V @ 33µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 40V FET Feature: - Power Dissipation (Max): 79W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock3,726
IPP13N03LB G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 30A TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1355pF @ 15V FET Feature: - Power Dissipation (Max): 52W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock2,088
IPP147N03L G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 20A TO-220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V FET Feature: - Power Dissipation (Max): 31W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock3,528
IPP147N12N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 120V 56A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 56A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V Vgs(th) (Max) @ Id: 4V @ 61µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 60V FET Feature: - Power Dissipation (Max): 107W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock12,708
IPP14N03LA Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 30A TO-220AB Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13.9mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 15V FET Feature: - Power Dissipation (Max): 46W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock6,858
IPP16CN10LGXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 54A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15.7mOhm @ 54A, 10V Vgs(th) (Max) @ Id: 2.4V @ 61µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4190pF @ 50V FET Feature: - Power Dissipation (Max): 100W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock2,100
IPP16CN10NGHKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16.5mOhm @ 53A, 10V Vgs(th) (Max) @ Id: 4V @ 61µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 50V FET Feature: - Power Dissipation (Max): 100W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock4,752
IPP16CN10NGXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 53A TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16.5mOhm @ 53A, 10V Vgs(th) (Max) @ Id: 4V @ 61µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 50V FET Feature: - Power Dissipation (Max): 100W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock7,680
IPP16CNE8N G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 53A TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16.5mOhm @ 53A, 10V Vgs(th) (Max) @ Id: 4V @ 61µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 40V FET Feature: - Power Dissipation (Max): 100W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock3,006
IPP17N25S3100AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 17A TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 54µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V FET Feature: - Power Dissipation (Max): 107W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock21,840
IPP180N10N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 43A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 3.5V @ 33µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V FET Feature: - Power Dissipation (Max): 71W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock16,140
IPP200N15N3GHKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 50A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 75V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock5,526
IPP200N15N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 50A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 75V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock31,068
IPP200N25N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 64A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 64A, 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7100pF @ 100V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock9,084
IPP21N03L G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO-220 Manufacturer: Infineon Technologies Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock8,280
IPP220N25NFDAKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 61A TO220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 61A, 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7076pF @ 125V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock8,436
IPP22N03S4L15AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 22A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14.9mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 2.2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V FET Feature: - Power Dissipation (Max): 31W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock8,658
IPP230N06L3 G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 30A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 30V FET Feature: - Power Dissipation (Max): 36W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock8,388
IPP25N06S325XK Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 25A TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 25.1mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1862pF @ 25V FET Feature: - Power Dissipation (Max): 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock3,870
IPP25N06S3L-22 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 25A TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 21.6mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock7,614
IPP260N06N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 27A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 26mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 4V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V FET Feature: - Power Dissipation (Max): 36W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock3,114
IPP26CN10NGHKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 35A TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 26mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 39µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 50V FET Feature: - Power Dissipation (Max): 71W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock8,136
IPP26CNE8N G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 35A TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 26mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 39µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 40V FET Feature: - Power Dissipation (Max): 71W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock3,618
IPP320N20N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 34A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V FET Feature: - Power Dissipation (Max): 136W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock26,544
IPP35CN10N G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 27A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 4V @ 29µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 50V FET Feature: - Power Dissipation (Max): 58W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock5,958
IPP35CN10NGXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 27A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 4V @ 29µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 50V FET Feature: - Power Dissipation (Max): 58W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock8,136
IPP410N30NAKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 41mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7180pF @ 100V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock9,564
IPP45N06S3-16 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 45A TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15.7mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 4V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 25V FET Feature: - Power Dissipation (Max): 65W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock4,086
IPP45N06S3L-13 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 45A TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 13.4mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V FET Feature: - Power Dissipation (Max): 65W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock5,544

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