Transistors

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Records 64,903

Page 1315/2164

Part Number	Description	In Stock
IPP084N06L3GHKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 50A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.2V @ 34µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 30V FET Feature: - Power Dissipation (Max): 79W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock8,856
IPP084N06L3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 50A TO-220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.2V @ 34µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 30V FET Feature: - Power Dissipation (Max): 79W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock5,580
IPP086N10N3GHKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 80A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 73A, 10V Vgs(th) (Max) @ Id: 3.5V @ 75µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 50V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock6,192
IPP086N10N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 80A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 73A, 10V Vgs(th) (Max) @ Id: 3.5V @ 75µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 50V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock18,888
IPP08CN10L G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 98A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 98A, 10V Vgs(th) (Max) @ Id: 2.4V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8610pF @ 50V FET Feature: - Power Dissipation (Max): 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock4,806
IPP08CN10N G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 95A TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 95A, 10V Vgs(th) (Max) @ Id: 4V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 50V FET Feature: - Power Dissipation (Max): 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock6,138
IPP08CNE8N G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 95A TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.4mOhm @ 95A, 10V Vgs(th) (Max) @ Id: 4V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6690pF @ 40V FET Feature: - Power Dissipation (Max): 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock6,894
IPP093N06N3GHKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 50A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 34µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 30V FET Feature: - Power Dissipation (Max): 71W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock3,582
IPP093N06N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 50A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 34µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 30V FET Feature: - Power Dissipation (Max): 71W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock17,244
IPP096N03L G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 35A TO-220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.6mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V FET Feature: - Power Dissipation (Max): 42W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock7,380
IPP09N03LA Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 50A TO-220AB Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1642pF @ 15V FET Feature: - Power Dissipation (Max): 63W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock5,004
IPP100N04S204AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 172nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock2,970
IPP100N04S204AKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 172nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock7,290
IPP100N04S2L03AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock3,456
IPP100N04S2L03AKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock8,136
IPP100N04S303AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 25V FET Feature: - Power Dissipation (Max): 214W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock8,604
IPP100N04S4H2AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TO220-3-1 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7180pF @ 25V FET Feature: - Power Dissipation (Max): 115W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock7,740
IPP100N06S205AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 100A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5110pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock6,930
IPP100N06S205AKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 100A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5110pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock4,986
IPP100N06S2L05AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 100A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock5,346
IPP100N06S2L05AKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 100A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock6,426
IPP100N06S3-03 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 100A TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 21620pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock5,670
IPP100N06S3-04 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 100A TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 314nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14230pF @ 25V FET Feature: - Power Dissipation (Max): 214W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock4,068
IPP100N06S3L-03 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 100A TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2.2V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 550nC @ 10V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 26240pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock7,380
IPP100N06S3L-04 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 100A TO-220 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2.2V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 362nC @ 10V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 17270pF @ 25V FET Feature: - Power Dissipation (Max): 214W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock8,244
IPP100N08N3GHKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 70A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V Vgs(th) (Max) @ Id: 3.5V @ 46µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 40V FET Feature: - Power Dissipation (Max): 100W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock3,816
IPP100N08N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 70A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V Vgs(th) (Max) @ Id: 3.5V @ 46µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 40V FET Feature: - Power Dissipation (Max): 100W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	In Stock7,056
IPP100N08S207AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 100A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock7,794
IPP100N08S2L07AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 100A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock9,960
IPP100N10S305AKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 100A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11570pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	In Stock18,432

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