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IPP11N03LA

IPP11N03LA

For Reference Only

Part Number IPP11N03LA
PNEDA Part # IPP11N03LA
Description MOSFET N-CH 25V 30A TO-220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,220
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP11N03LA Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP11N03LA
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP11N03LA, IPP11N03LA Datasheet (Total Pages: 10, Size: 292 KB)
PDFIPP11N03LA Datasheet Cover
IPP11N03LA Datasheet Page 2 IPP11N03LA Datasheet Page 3 IPP11N03LA Datasheet Page 4 IPP11N03LA Datasheet Page 5 IPP11N03LA Datasheet Page 6 IPP11N03LA Datasheet Page 7 IPP11N03LA Datasheet Page 8 IPP11N03LA Datasheet Page 9 IPP11N03LA Datasheet Page 10

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IPP11N03LA Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs11.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1358pF @ 15V
FET Feature-
Power Dissipation (Max)52W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

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